Datasheet > QT114-D

QT114-D

更新时间： 2024-01-25 21:24:41

品牌	Logo	应用领域
昆腾 - QUANTUM		传感器
页数	文件大小	规格书
12页	309K
描述
CHARGE-TRANSFER QLEVEL SENSOR IC

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

QT114-D 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SOP, SOP8,.25	Reach Compliance Code：	unknown
风险等级：	5.92	Is Samacsys：	N
商用集成电路类型：	CONSUMER CIRCUIT	JESD-30 代码：	R-PDSO-G8
端子数量：	8	最高工作温度：	70 °C
最低工作温度：		封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
电源：	3 V	认证状态：	Not Qualified
子类别：	Other Consumer ICs	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	Base Number Matches：	1

QT114-D 数据手册

Figure 3-2

Figure 3-3

Getting HeartBeat pulses with a pull-down resistor

Using a micro to obtain HB pulses in either output state

HeartBeat™ Pulses

PORT_M.1

OUT1

OUT2

FILT

SNS2

SNS1

POL

OUT1

OUT2

FILT

SNS2

SNS1

POL

PORT_M.2

PORT_M.3

Microprocessor

PORT_M.4

Electromechanical devices will ignore this short pulse. The semiconductor transient protection devices or MOV's on the

pulse also has too low a duty cycle to visibly affect LED’s. It sense lead is not advised; these devices have extremely

can be filtered completely if desired, by adding an RC large amounts of parasitic C which will swamp the sensor.

timeconstant to filter the output, or if interfacing directly and

Re2 functions to isolate the transient from the QT110's Vcc

only to a high-impedance CMOS input, by doing nothing or

pin; values of around 1K ohms are reasonable.

at most adding a small non-critical capacitor from each used

OUT line to ground (Figure 3-4).

As with all ESD protection networks, it is important that the

transients be led away from the circuit. PCB ground layout is

crucial; the ground connections to the diodes and C1 should

all go back to the power supply ground or preferably, if

available, a chassis ground connected to earth. The currents

should not be allowed to traverse the area directly under the

QT114.

3.4 ESD PROTECTION

In some installations the QT114 will be protected from direct

static discharge by the insulation of the electrode and the

GATE OR

MICRO INPUT

If the QT114 is connected to an external circuit via a long

cable, it is possible for ground-bounce to cause damage to

the OUT pins; even though the transients are led away from

the QT114 itself, the connected signal or power ground line

will act as an inductor, causing a high differential voltage to

build up on the OUT wires with respect to ground. If this is a

possibility, the OUT pins should have a resistance in series

with them on the sensor PCB to limit current; this resistor

should be as large as can be tolerated by the load.

CMOS

OUT1

OUT2

FILT

SNS2

SNS1

POL

C_o

100pF

CMOS

C_o

3.5 SAMPLE CAPACITOR

Figure 3-4 Eliminating HB Pulses

Charge sampler Cs should be a stable grade of capacitor,

like PPS film, NPO ceramic, or polycarbonate. The

acceptable Cs range is anywhere from 10nF to 100nF

(0.1uF) and its required value will depend on load Cx. In

some cases, to achieve the 'right' value, two or more

capacitors may need to be wired in parallel.

fact that the probe may not be accessible to human contact.

However, even with probe insulation, transients can still flow

into the electrode via induction, or in extreme cases, via

dielectric breakdown. Some moving fluids (like oils) and

powders can build up a substantial triboelectric charge

directly on the probe surface.

The QT114 does have diode protection on its terminals

which can absorb and protect the device from most induced

discharges, up to 20mA; the usefulness of the internal

clamping will depending on the probe insulation's dielectric

properties, thickness, and the rise time of the transients.

ESD dissipation can be aided further with an added diode

protection network as shown in Figure 3-5. Because the

charge and transfer times of the QT114 are relatively long,

the circuit can tolerate very large values of Re1, as much as

50k ohms in most cases without affecting gain. The added

diodes shown (1N4150, BAV99 or equivalent low-C diodes)

will shunt the ESD transients away from the part, and Re1

will current-limit the rest into the QT110's own internal clamp

diodes. C1 should be around 10µF if it is to absorb positive

transients from a human body model standpoint without

rising in value by more than 1 volt. If desired C1 can be

replaced with an appropriate zener diode. Directly placing

Vcc

10✙F

To Electrodes

OUT1

OUT2

FILT

SNS2

SNS1

POL

Gnd

Figure 3-5 ESD Protection Network

- 8 -

1...5 6 789 10 11 12

中文翻译

下载PDF

与QT114-D相关器件

型号	品牌	获取价格	描述	数据表
QT114-DG	QUALCOMM	获取价格	QLEVEL⑩ SENSOR IC
QT114-IS	QUANTUM	获取价格	CHARGE-TRANSFER QLEVEL SENSOR IC
QT114-ISG	QUALCOMM	获取价格	QLEVEL⑩ SENSOR IC
QT114-S	QUANTUM	获取价格	CHARGE-TRANSFER QLEVEL SENSOR IC
QT115	QUANTUM	获取价格	QT 11x Series Variations
QT115-D	ETC	获取价格	IC-QPROX SENSOR
QT115H	QUANTUM	获取价格	QT 11x Series Variations
QT115-S	ETC	获取价格	IC-SMD-QPROX SENSOR
QT117L	QUANTUM	获取价格	Designed to Output raw Data over a Master-mode SPI Port
QT118H	QUANTUM	获取价格	CHARGE-TRANSFER TOUCH SENSOR

与QT114-D相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

11
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

14
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

8
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

8

产品中心

服务支持

精选活动

关于我们

帮助中心

QT114-D

QT114-D 技术参数

QT114-D 数据手册

与QT114-D相关器件

与QT114-D相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

QT114-D

QT114-D 技术参数

QT114-D 数据手册

与QT114-D相关器件

与QT114-D相关文章

您还可以找

您在本页遇到什么问题？