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PSD150F12

更新时间: 2024-02-08 21:26:43
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POWERSEM /
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描述
Three Phase RECTIFIERBRIDGE

PSD150F12 数据手册

  
ECO-PACTM 2  
Three Phase  
Rectifier Bridge  
with fast Recovery Epitaxial Diode (FRED)  
PSD 150F  
IdAV  
VRRM  
trr  
= 130 A  
= 800 - 1200 V  
= 40 ns  
+
PS  
Preliminary Data Sheet  
VRSM VRRM  
VDSM VDRM  
Type  
~
A1  
L9  
K10  
~
~
(V)  
(V)  
EG  
-
800 800 PSD 150F/08  
1200 1200 PSD 150F/12  
Features  
Symbol  
I*dAV  
Test Conditions  
Maximum Ratings  
TC = 75 °C, (per module)  
130  
500  
550  
450  
500  
A
A
A
A
A
Package with DCB ceramic base plate  
Isolation voltage 3000 V∼  
IFSM  
TVJ = 45 °C t = 10 ms (50 Hz), sine  
VR = 0  
t = 8.3 ms (60 Hz), sine  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
Planar glass passivated chips  
Low forward voltage drop  
TVJ = TVJM  
VR = 0  
Leads suitable for PC board  
soldering  
i2 dt  
TVJ = 45 °C t = 10 ms (50 Hz), sine  
1250  
1250  
1010  
1040  
A²s  
A²s  
A²s  
A²s  
UL registered, E 148688  
VR = 0  
TVJ = TVJM  
VR = 0  
t = 8.3 ms (60 Hz), sine  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
Applications  
TVJ  
-40... + 150  
150  
°C  
°C  
°C  
Supplies for DC power equipment  
TVJM  
Tstg  
Input and output rectifier for high  
frequency  
-40... + 125  
VISOL  
50/60 Hz, RMS t = 1 min  
3000  
3600  
V∼  
V∼  
Battery DC power supplies  
I
ISOL 1 mA  
t = 1 s  
Field supply for DC motors  
Md  
Mounting torque  
(M4)  
1.5 - 2.0  
14 - 18  
22  
Nm  
Advantages  
lb.in.  
g
Weight  
typ.  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
Symbol  
IR  
Test Conditions  
VR = VRRM, TVJ = TVJM  
VR = VRRM, TVJ = 25°C  
Characteristic Value  
mA  
2.5  
Low noise switching  
0.65  
mA  
Small and light weight  
VF  
IF = 60 A, TVJ = 25 °C  
2.75  
V
VTO  
rT  
For power-loss calculations only  
1.12  
5.7  
V
Package style and outline  
Dimensions in mm (1mm = 0.0394“)  
mΩ  
RthJC  
per diode; DC  
per module  
0.85  
0.14  
1.0  
K/W  
K/W  
K/W  
RthJK  
per diode; DC  
per module  
0.16  
K/W  
A
IRM  
IF=130A; -diF/dt=100A/µs; VR=100V  
L=0.05 mH; TVJ= 100°C  
IF=1A; -diF/dt=200A/µs; VR=30V;  
TVJ= 25°C  
typ. 7.8  
typ. 40  
trr  
ns  
ds  
dA  
a
Creeping distance on surface  
Creeping distance in air  
11.2  
9.45  
50  
mm  
mm  
m/s²  
Max. allowable acceleration  
Data according to IEC 60747 refer to a single diode unless otherwise stated  
*- for resistive load at bridge output  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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