Datasheet > PMLL4448/T3

PMLL4448/T3

更新时间： 2024-01-24 16:47:44

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	114K
描述
DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

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中文翻译

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技术参数
数据手册

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PMLL4448/T3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.18
Base Number Matches：	1

PMLL4448/T3 数据手册

PMLL4148L; PMLL4448

High-speed switching diodes

Rev. 8 — 1 February 2011

Product data sheet

1. Product profile

1.1 General description

Single high-speed switching diodes, fabricated in planar technology, and encapsulated in

small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages.

Table 1.

Product overview

Type number

PMLL4148L

PMLL4448

Package

Configuration

SOD80C

single

1.2 Features and benefits

High switching speed: t_rr≤ 4 ns

Reverse voltage: V_R≤ 75 V

Repetitive peak reverse voltage: V_RRM≤ 100 V

Repetitive peak forward current: I_FRM≤ 450 mA

Small hermetically sealed glass SMD package

1.3 Applications

High-speed switching

Reverse polarity protection

1.4 Quick reference data

Table 2.

Symbol

I_F

Quick reference data

Parameter

Conditions

Min

Typ

Max

200

450

Unit

[1]

forward current

I_FRM

repetitive peak forward

current

V_R

V_F

reverse voltage

forward voltage

PMLL4148L

I_F= 50 mA

I_F= 5 mA

PMLL4448

620

720

I_F= 100 mA

[2]

t_rr

reverse recovery time

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] When switched from I_F= 10 mA to I_R= 60 mA; R_L= 100 Ω; measured at I_R= 1 mA.

12 3 4 5 6 7...11

中文翻译

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