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PMLL4148LT/R PDF预览

PMLL4148LT/R

更新时间: 2024-02-23 19:10:31
品牌 Logo 应用领域
飞利浦 - PHILIPS 二极管
页数 文件大小 规格书
11页 57K
描述
Rectifier Diode, 1 Element, 0.2A, 75V V(RRM),

PMLL4148LT/R 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.75
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-609代码:e3
最大非重复峰值正向电流:4 A元件数量:1
最高工作温度:200 °C最大输出电流:0.2 A
最大重复峰值反向电压:75 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

PMLL4148LT/R 数据手册

 浏览型号PMLL4148LT/R的Datasheet PDF文件第2页浏览型号PMLL4148LT/R的Datasheet PDF文件第3页浏览型号PMLL4148LT/R的Datasheet PDF文件第4页浏览型号PMLL4148LT/R的Datasheet PDF文件第5页浏览型号PMLL4148LT/R的Datasheet PDF文件第6页浏览型号PMLL4148LT/R的Datasheet PDF文件第7页 
PMLL4148L; PMLL4448  
High-speed switching diodes  
Rev. 06 — 4 April 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Single high-speed switching diodes, fabricated in planar technology, and encapsulated in  
small hermetically sealed glass SOD80C SMD packages.  
Table 1:  
Product overview  
Type number  
Package  
Philips  
Configuration  
JEITA  
PMLL4148L  
PMLL4448  
SOD80C  
SOD80C  
-
-
single diode  
single diode  
1.2 Features  
Small hermetically sealed glass SMD package  
High switching speed: 4 ns  
Continuous reverse voltage: 75 V  
Repetitive peak reverse voltage: 100 V  
Repetitive peak forward current: 450 mA  
1.3 Applications  
High-speed switching  
Inverse-polarity protection  
1.4 Quick reference data  
Table 2:  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
mA  
mA  
[1]  
forward current  
-
-
-
-
200  
450  
IFRM  
repetitive peak forward  
current  
VR  
VF  
reverse voltage  
forward voltage  
PMLL4148L  
-
-
-
-
-
-
75  
V
IF = 100 mA  
IF = 10 mA  
IF = 5 mA  
-
1000  
1000  
720  
4
mV  
mV  
mV  
ns  
-
PMLL4448  
620  
-
[2]  
trr  
reverse recovery time  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] When switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA  
 
 
 
 
 
 
 
 

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