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PMBZ5239BT/R PDF预览

PMBZ5239BT/R

更新时间: 2024-02-10 18:04:26
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
12页 70K
描述
DIODE 9.1 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Voltage Regulator Diode

PMBZ5239BT/R 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.32Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3膝阻抗最大值:600 Ω
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.25 W认证状态:Not Qualified
标称参考电压:9.1 V最大反向电流:3 µA
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
电压温度Coeff-Max:6.188 mV/ °C最大电压容差:5%
工作测试电流:20 mABase Number Matches:1

PMBZ5239BT/R 数据手册

 浏览型号PMBZ5239BT/R的Datasheet PDF文件第2页浏览型号PMBZ5239BT/R的Datasheet PDF文件第3页浏览型号PMBZ5239BT/R的Datasheet PDF文件第4页浏览型号PMBZ5239BT/R的Datasheet PDF文件第5页浏览型号PMBZ5239BT/R的Datasheet PDF文件第6页浏览型号PMBZ5239BT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PMBZ5226B to PMBZ5257B  
Voltage regulator diodes  
1999 May 17  
Product specification  
Supersedes data of 1996 Apr 26  

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