MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RLB060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Ratings
Unit
Symbol
Parameter
Condition
Supply Voltage Protected by
SC
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
400
500
V
V
VCC(PROT)
VCC(surge) Supply Voltage (Surge)
Applied between : P-N, Surge value
Module Case Operating
Temperature
TC
(Note-1)
–20 ~ +100
°C
Storage Temperature
Isolation Voltage
Tstg
Viso
–40 ~ +125
°C
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2500
Vrms
(Note-1) Tc (base plate) measurement point is below.
W
V
B
U
Top view
Tc
THERMAL RESISTANCES
Limits
Typ.
—
Condition
Symbol
Unit
Parameter
Min.
—
—
—
—
—
—
—
—
Max.
0.32*
0.53*
0.42*
0.71*
0.42
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Brake IGBT part
(Note-2)
(Note-2)
(Note-2)
(Note-2)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
—
—
Junction to case Thermal
Resistances
Brake FWDi part
—
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Brake IGBT part
—
°C/W
0.69
—
0.55
—
Brake FWDi part
0.92
—
Case to fin, (per 1 module)
Thermal grease applied
Rth(c-f)
Contact Thermal Resistance
0.038
—
—
(Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.
(Note-2) Tc (under the chip) measurement point is below.
(unit : mm)
Br
IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi
arm
UP
VP
WP
UN
VN
WN
axis
X
Y
28.7
28.7
0.8
65.2
65.2
2.5
85.3
85.3
2.5
38.0
4.6
38.0
55.4
4.6
55.4
75.5
4.6
75.5
19.0
23.0
6.6
–6.6
–6.6
–6.6
–4.5
–4.5
–4.5
–7.3
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Typ.
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
Unit
Condition
Symbol
VCE(sat)
Parameter
Collector-Emitter
Min.
Max.
—
—
—
0.5
—
—
—
—
—
—
2.1
2.0
3.3
2.4
0.4
1.0
2.5
1.0
1
VD = 15V, IC = 75A
VCIN = 0V, Pulsed
Tj = 25°C
V
V
Saturation Voltage
(Fig. 1) Tj = 125°C
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
VEC
ton
FWDi Forward Voltage
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 75A
Tj = 125°C
trr
µs
tc(on)
toff
Switching Time
Inductive Load
(Fig. 3,4)
Tj = 25°C
Tj = 125°C
tc(off)
Collector-Emitter
Cutoff Current
ICES
V
CE = VCES, VCIN = 15V
(Fig. 5)
mA
—
10
Apr. 2004