Datasheet > PM75RSD120

PM75RSD120

更新时间： 2024-11-21 06:04:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
9页	144K
描述
FLAT-BASE TYPE INSULATED PACKAGE

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中文翻译

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数据手册

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PM75RSD120 数据手册

MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOTWPOEWR EMROMDUOLDEUSL>ES>

PM75RPMS7D5R1S2D0120

FLAFTL-ABTA-SBEASTEYPTEYPE

INSIUNLSAUTLEADTEPDACPKAACGKAEGE

FEATURE

PM75RSD120

a) Adopting new 4th generation planar IGBT chip, which per-

formance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse

recovery characteristics.

c) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole

is same as S-series 3rd generation IPM.

• 3φ 75A, 1200V Current-sense IGBT for 15kHz switching

• 25A, 1200V Current-sense regenerative brake IGBT

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for over-

current, short-circuit, over-temperature & under-voltage

(P-Fo available from upper leg devices)

• Acoustic noise-less 11/15kW class inverter application

• UL Recognized

Yellow Card No.E80276(N)

FileNo.E80271

APPLICATION

General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES

Dimensions in mm

110±1

95±0.5

Screwing depth

Min9.0

3-2

6-2

17.02

3.22

4-φ5.5

MOUNTING HOLES

Terminal code

1. VUPC 11. WP

1 2 3 4

5 6 7 8

15 17 19

14 16 18

10 12

2. UFO

3. UP

12. VWP1

13. VNC

4. VUP1 14. VN1

5. VVPC 15. Br

6. VFO

7. VP

16. UN

17. VN

8. VVP1 18. WN

9. VWPC 19. Fo

10. WFO

φ2.54

3-2

3.22

0.5±0.3

4-R6

0.5

21.2

24.5

22 ⁺^–0¹^.^.⁵⁰

6-M5NUTS

2-φ2.54

66.44

19- 0.5

A : DETAIL

LABEL

Jul. 2005

12 3 4 5 6 7...9

中文翻译

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