Datasheet > PJU3NA80

PJU3NA80

更新时间： 2024-02-05 10:15:20

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
8页	467K
描述
800V N-Channel MOSFET

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中文翻译

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数据手册

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PJU3NA80 数据手册

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80

800V N-Channel MOSFET

800 V

3 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V,I_D@1.5A<4.8Ω

 High switching speed

ITO-220AB-F

TO-220AB

 Improved dv/dt capability

 Low Gate Charge

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

TO-252

TO-251AB

Mechanical Data

 Case : TO-251AB,TO-252 ,TO-220AB, ITO-220AB-F Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams

 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams

 TO-220AB Approx. Weight : 0.067 ounces, 2 grams

 ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS

V_DS

V_GS

I_D

800

+30

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy ^{(Note 1)}

I_DM

E_AS

173

T_C=25^oC

Power Dissipation

106

W/ ^oC

P_D

Derate above 25^oC

0.64

0.85

0.31

0.64

Operating Junction and

T_J,T_STG

-55~150

^oC

Storage Temperature Range

Typical Thermal resistance

^oC/W

R_θJC

R_θJA

1.56

110

1.2

62.5

3.2

1.56

110

Junction to Case

120

Junction to Ambient

 Limited only By Maximum Junction Temperature

March 10,2014-REV.00

Page 1

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