Datasheet > PDZ3.9B-Q

PDZ3.9B-Q

更新时间： 2023-09-03 20:26:56

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	251K
描述
Single Zener diodesProduction

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中文翻译

获取价格

数据手册

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PDZ3.9B-Q 数据手册

Nexperia

PDZ-B-Q series

Single Zener diodes

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

I_F

Parameter

Conditions

Min

Max

200

see

characteristics

table

Unit

continuous forward current

non-repetitive peak reverse current

I_ZSM

t_p= 100 µs; square wave;

T_amb= 25 °C prior to surge

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C

[1] -

400

°C

−65

+150

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

R_th(j-sp)

R_th(j-a)

Parameter

Conditions

Min

Typ

Max

130

340

Unit

K/W

thermal resistance from junction to solder point

thermal resistance from junction to ambient

in free air

[1] -

[1] Device mounted on an FR4 Printed-Circuit Board (PCB),single-sided copper, tin-plated and standard footprint.

10. Characteristics

Table 7. Characteristics

T_j= 25 °C unless otherwise specified.

Symbol

V_F

Parameter

Conditions

I_F= 10 mA

I_F= 100 mA

Min

[1] -

Typ

Max

0.9

Unit

forward voltage

V_F

1.1

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

PDZ-B-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 21 December 2022

3 / 11

1 234 5 6 7...11

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