5秒后页面跳转
PDT1447-DI-SC PDF预览

PDT1447-DI-SC

更新时间: 2023-02-26 14:08:48
品牌 Logo 应用领域
安捷伦 - AGILENT 光电半导体
页数 文件大小 规格书
6页 91K
描述
PIN Photodiode

PDT1447-DI-SC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.92
最大暗电源:1 nAJESD-609代码:e0
最高工作温度:85 °C最低工作温度:-40 °C
光电设备类型:PIN PHOTODIODE最长响应时间:5e-10 s
最大反向电压:20 V半导体材料:InGaAs
子类别:Photo Diodes端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

PDT1447-DI-SC 数据手册

 浏览型号PDT1447-DI-SC的Datasheet PDF文件第1页浏览型号PDT1447-DI-SC的Datasheet PDF文件第3页浏览型号PDT1447-DI-SC的Datasheet PDF文件第4页浏览型号PDT1447-DI-SC的Datasheet PDF文件第5页浏览型号PDT1447-DI-SC的Datasheet PDF文件第6页 
2
PDT Pigtailed Photodiode Specifications  
Absolute Maximum Ratings  
Absolute maximum limits mean that no catastrophic damage will occur if the product is subjected to these ratings for short periods,  
provided each limiting parameter is in isolation and all other parameters have values within the performance specification. It should  
not be assumed that limiting values of more than one parameter can be applied to the product at the same time.  
Parameter  
Maximum  
Symbol  
Minimum  
Units  
V
mA  
V
Reverse Voltage  
Vr  
Ir  
Vf  
If  
-
-
20  
1
Reverse Current  
Forward Voltage  
Forward Current  
Power Dissipation  
Operating Temperature  
Storage Temperature  
Soldering - 10 seconds  
Fiber Pull  
-
1
-
mA  
mW  
°C  
-
5
50  
85  
85  
260  
10  
-
Tc  
Ts  
-
-40  
-40  
-
°C  
°C  
N
-
-
Performance Specification  
Parameter  
Symbol  
Test Conditions:  
PDT134X  
PDT144X  
Min Max  
Units  
Unless Otherwise  
Stated  
Vr = 5 V, Tc = 25°C  
Max  
Min  
Dark Current  
-
1
50  
Id  
-
-
1
50  
-
nA  
nA  
V
-
35  
-
Tc = 85°C  
Ir = 10 µA  
1 MHz  
Reverse Breakdown Voltage  
Capacitance  
-
Vbr  
C
35  
-
1.1  
-
1.7  
-
pF  
Responsivity  
0.7  
1200  
3
A/W  
nM  
GHz  
nS  
R
λ = 1300 nm  
80% points  
0.7  
Operating Wavelength  
Small Signal Bandwidth  
Rise/Fall Times  
1650  
-
λ
1200 1650  
Bw  
τr/τf  
1.5  
-
-
-
0.25  
0.5  
Fiber Pigtail: Tight jacketed, self-mode stripping, multimode fiber  
Minimum  
Parameter  
Units  
Maximum  
Length  
-
53  
1.0  
47  
122  
-
m
µm  
µm  
%
Core Diameter  
Cladding Diameter  
Concentricity error  
Secondary Jacket Diameter  
128  
8
1.0  
0.8  
mm  

与PDT1447-DI-SC相关器件

型号 品牌 获取价格 描述 数据表
PDT15012 NIEC

获取价格

150A Avg 1200~1600 Volts
PDT15016 NIEC

获取价格

150A Avg 1200~1600 Volts
PDT1508 NIEC

获取价格

Silicon Controlled Rectifier, 235A I(T)RMS, 150000mA I(T), 800V V(DRM), 800V V(RRM), 2 Ele
PDT-15-10 WABASH

获取价格

The Compact Power Transformer
PDT15116 NIEC

获取价格

150A Avg 1600 Volts
PDT15116_1 NIEC

获取价格

150A Avg 1600 Volts
PDT-15-120 WABASH

获取价格

The Compact Power Transformer
PDT-15-126 WABASH

获取价格

The Compact Power Transformer
PDT-15-16 WABASH

获取价格

The Compact Power Transformer
PDT1518 NIEC

获取价格

150A Avg 800 Volts