Datasheet > PC8179TB-E3

PC8179TB-E3

更新时间： 2024-01-24 20:59:02

品牌	Logo	应用领域
日电电子 - NEC		放大器通信
页数	文件大小	规格书
28页	151K
描述
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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中文翻译

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PC8179TB-E3 数据手册

DATA SHEET

BIPOLAR ANALOG INTEGRATED CIRCUIT

µPC8179TB

SILICON MMIC LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This

IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

wideband matched IC. This low current amplifier operates on 3.0 V.

This IC is manufactured using NEC’s 30 GHz f^maxUHS0 (Ultra High Speed Process) silicon bipolar process. This

process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface

from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

Low current consumption

Supply voltage

I^CC= 4.0 mA TYP. @ V^CC= 3.0 V

V^CC= 2.4 to 3.3 V

High efficiency

P^{O (1 dB)}= +3.0 dBm TYP. @ f = 1.0 GHz

P^{O (1 dB)}= +1.5 dBm TYP. @ f = 1.9 GHz

P^{O (1 dB)}= +1.0 dBm TYP. @ f = 2.4 GHz

G^P= 13.5 dB TYP. @ f = 1.0 GHz

G^P= 15.5 dB TYP. @ f = 1.9 GHz

G^P= 15.5 dB TYP. @ f = 2.4 GHz

ISL = 44 dB TYP. @ f = 1.0 GHz

ISL = 42 dB TYP. @ f = 1.9 GHz

ISL = 41 dB TYP. @ f = 2.4 GHz

0.1 to 2.4 GHz (Output port LC matching)

•

Power gain

Excellent isolation

•

Operating frequency

High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

Light weight 7 mg (Standard value)

APPLICATION

•

Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14730EJ2V0DS00 (2nd edition)

Date Published August 2000 N CP(K)

Printed in Japan

2000

12 3 4 5 6 7...28

中文翻译

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