THYRISTOR MODULE
PAT20012 PAT20016
PAH20012 PAH20016
200A / 1200V to 1600V
FEATURES
OUTLINE DRAWING
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
PAT
PAH
TYPICAL APPLICATIONS
* Rectified For General Use
Maximum Ratings
Approx Net Weight:500g
Grade
Symbol
Unit
Parameter
PAT/PAH20012
PAT/PAH20016
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
VDRM
VDSM
VRRM
VRSM
1200
1300
1200
1300
1600
1700
1600
1700
V
V
Max Rated
Parameter
Unit
Conditions
Value
50Hz Half Sine Wave condition
Tc=75°C
Average Rectified Output Current
RMS On-State Current
IO(AV)
IT(RMS)
ITSM
200
A
A
314
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
Surge On-State Current
I Squared t
4000
80000
100
A
I2t
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
A2s
A/µs
•
Critical Rate of Turned-On Current
di/dt
IG=300mA, diG/dt=0.2A/µs
Peak Gate Power
Average Gate Power
Peak Gate Current
PGM
PG(AV)
IGM
5
1
2
W
W
A
Peak Gate Voltage
VGM
VRGM
Tjw
Tstg
Viso
10
5
V
V
°C
°C
V
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
-40 to +125
-40 to +125
2500
2.5 to 3.5
9.0 to 10.0
Base Plate to Terminals, AC1min
M6 Screw
Case mounting
Terminals
Mounting torque
Ftor
N•m
M8 Screw
Value per 1 Arm