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PA2423MB PDF预览

PA2423MB

更新时间: 2024-01-30 12:37:26
品牌 Logo 应用领域
SIGE 放大器功率放大器蓝牙
页数 文件大小 规格书
10页 351K
描述
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information

PA2423MB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.88特性阻抗:50 Ω
构造:COMPONENT增益:23.5 dB
最大输入功率 (CW):8 dBmJESD-609代码:e0
最大工作频率:2500 MHz最小工作频率:2400 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:NARROW BAND MEDIUM POWER端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

PA2423MB 数据手册

 浏览型号PA2423MB的Datasheet PDF文件第2页浏览型号PA2423MB的Datasheet PDF文件第3页浏览型号PA2423MB的Datasheet PDF文件第4页浏览型号PA2423MB的Datasheet PDF文件第5页浏览型号PA2423MB的Datasheet PDF文件第6页浏览型号PA2423MB的Datasheet PDF文件第7页 
PA2423MB  
2.4 GHz Bluetooth Class 1 Power Amplifier IC  
Production Information  
Applications  
Product Description  
Bluetoothtm Class 1  
USB Dongles  
Laptops  
Access Points  
Cordless Piconets  
A monolithic, high-efficiency, silicon-germanium  
power amplifier IC, the PA2423MB is designed  
for class  
1
Bluetoothtm 2.4 GHz radio  
applications. It delivers +22.7 dBm output power  
with 45% power-added efficiency – making it  
capable of overcoming insertion losses of up to  
2.7 dB between amplifier output and antenna  
input in class 1 Bluetoothtm applications.  
The amplifier features:  
Features  
an analog control input for improving PAE at  
reduced output power levels;  
+22.7 dBm at 45% Power Added Efficiency  
Low current 80mA typical @ Pout=+20 dBm  
Temperature stability better than 1dB  
Power-control and Power-down modes  
Single 3.3 V Supply Operation  
a digital control input for controlling power up  
and power down modes of operation.  
An on-chip ramping circuit provides the turn-  
on/off switching of amplifier output with less than  
3dB overshoot, meeting the Bluetoothtm  
specification 1.1.  
Temperature Rating: -40C to +85C  
8 lead Exposed Pad MSOP Plastic Package  
The PA2423MB operates at 3.3V DC. At typical  
output power level (+22.7 dBm), its current  
consumption is 125 mA.  
Ordering Information  
The silicon/silicon-germanium structure of the  
PA2423MB – and its exposed-die-pad package,  
soldered to the system PCB – provide high  
thermal conductivity and a subsequently low  
junction temperature. This device is capable of  
operating at a duty cycle of 100 percent.  
Shipping  
Method  
Type  
Package  
PA2423MB  
8 - MSOP  
Tape and reel  
Tubes -samples  
PA2423MB-EV  
Evaluation kit  
Functional Block Diagram  
VCC0 VRAMP  
VCTL  
Ramp  
Circuitry  
Bias Generator  
IN  
Interstage  
Match  
Stage 2  
Stage 1  
OUT/ VCC2  
VCC1  
GND  
GND  
DOC# 05PDS001 Rev 9 ꢁ  
07/26/2001  
Page 1 of 10  

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