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P8212

更新时间： 2024-01-19 01:19:24
品牌 Logo 应用领域
HAMAMATSU 逻辑集成电路光电二极管
页数 文件大小 规格书
2页 146K
描述
Light emitting/receiving module

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中文翻译

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P8212 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：DIP, DIP24,.6Reach Compliance Code：unknown
风险等级：5.92JESD-30 代码：R-PDIP-T24
JESD-609代码：e0位数：8
端子数量：24最高工作温度：70 °C
最低工作温度：封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP24,.6
封装形状：RECTANGULAR封装形式：IN-LINE
子类别：Parallel IO Port表面贴装：NO
技术：BIPOLAR温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
Base Number Matches：1

P8212 数据手册

 浏览型号P8212的Datasheet PDF文件第2页 
M O D U L E  
Light emitting/receiving module  
P8212  
Integrated light emitting/receiving elements for automobile VICS  
P8212 is a light emitting/receiving module consisting of an LED array and a photodiode in the same small package. The width of  
this module is minimized so that automobile antennas can be designed thin. A lens is also fitted onto the photodiode to increase  
the amount of input light. Although the lens makes the photodiode directivity narrow, this problem was solved by separating the  
photodiode optical axis from the LED axis to match the light emitting and receiving areas required for VICS.  
Features  
Applications  
Small package  
Automobile VICS  
Lens design optimized for light emitting/receiving timings  
Cylindrical lens with less pickup error during component  
mounting  
Absolute maximum ratings (Ta=25 °C)  
■
Parameter  
Symbol  
VR Max.  
VR Max.  
IFP  
Value  
20  
Unit  
V
Photodiode reverse voltage  
LED reverse voltage  
4
V
LED pulse forward current *1  
Operating temperature  
Storage temperature  
1300  
mA  
°C  
°C  
Topr  
-30 to +95  
-40 to +115  
Tstg  
*1: 64 kHz, duty ratio=50 %, 4 ms ON, average duty ratio=2.5 %  
Electrical and optical characteristics for photodiode (Ta=25 °C)  
parameter  
■
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
nm  
Spectral response range  
-
480 to 1100  
-
-
l
Peak sensitivity wavelength  
-
960  
620  
540  
33  
nm  
lp  
520  
460  
27  
-
-
mA/W  
mA/W  
mA  
l=lp  
Photo sensitivity  
S
-
l=850 nm  
Short circuit current  
Dark current  
ISC  
ID  
100 lx, 2856 K  
VR=12 V  
-
1
10  
nA  
VR=12 V, RL=1 kW  
l=850 nm, -3dB  
VR=12 V, f=1 MHz  
Direction in long side  
Direction in short side  
Cut-off frequency  
fc  
Ct  
-
-
4
-
MHz  
pF  
Terminal capacitance  
Directivity at half width  
-
-
-
40  
±55  
-
-
-
degree  
+35, -18  
Electrical and optical characteristics for LED (Ta=25 °C)  
■
parameter  
Symbol  
Condition  
Min.  
Typ.  
850  
40  
Max.  
Unit  
nm  
Peak emission wavelength  
Spectral half width  
IF=100 mA  
830  
900  
lp  
IF=100 mA  
IFP=900 mA *2  
-
-
7.4  
10  
-
nm  
Dl  
Pulse forward voltage  
Reverse current  
VFP  
IR  
5.5  
6.3  
-
V
VR=4 V  
FIPe=p9I00 mA *2  
-
mA  
Pulse  
radiant  
intensity  
1400  
1800  
20  
mW/sr  
MHz  
Cut-off frequency  
fc  
-
IF=100 mA±10 mAp-p  
Direction in long side  
Direction in short side  
-
-
-
-
±30  
±13  
-
Directivity at half width  
degree  
-
*2: Average peak value in pulse operation at 64 kHz, 50 % duty ratio, 4 ms ON  
1
12

中文翻译

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P8212 替代型号

型号 品牌 替代类型 描述 数据表
SN74S412J TI

功能相似

 S SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP24, CERAMIC, DIP-24
SN54S412J TI

功能相似

 S SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP24, CERAMIC, DIP-24

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