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P6SMBJ110CA-T1 PDF预览

P6SMBJ110CA-T1

更新时间: 2024-02-05 22:45:59
品牌 Logo 应用领域
WTE 局域网光电二极管
页数 文件大小 规格书
5页 72K
描述
Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMB, 2 PIN

P6SMBJ110CA-T1 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.88
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压:140.5 V最小击穿电压:122 V
击穿电压标称值:131.25 V最大钳位电压:177 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大重复峰值反向电压:110 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P6SMBJ110CA-T1 数据手册

 浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第1页浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第3页浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第4页浏览型号P6SMBJ110CA-T1的Datasheet PDF文件第5页 
100  
75  
10,000  
1000  
Measured at  
zero bias  
Uni-directional  
50  
Bi-directional  
100  
25  
0
Tj = 25°C  
f = 1.0 MHz  
Vsig = 50 mV p-p  
10 X 1000 Waveform  
as defined by REA  
10  
1
10  
100  
1000  
0
25  
50  
75 100 125 150 175 200  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 1 Pulse Derating Curve  
VRWM, REVERSE STANDOFF VOLTAGE (V)  
Fig. 2 Typical Junction Capacitance  
100  
Tj = 25°C  
Non Repetitive  
Pulse Waveform  
Shown in Fig. 4  
10  
1.0  
0.1  
0.1  
1.0  
10  
100  
1000  
10000  
tp PULSE WIDTH (ms)  
Fig. 3 Pulse Rating Curve  
tr = 10µs  
Peak Value Ipp  
100  
50  
0
Half Value Ipp/2  
tp  
10 X 1000 Waveform  
as defined by R.E.A.  
3
0
1
2
t, TIME (ms)  
Fig. 4 Pulse Waveform  
P6SMBJ SERIES  
2 of 5  
© 2002 Won-Top Electronics  

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