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P6SMBJ11A PDF预览

P6SMBJ11A

更新时间: 2024-11-04 12:04:47
品牌 Logo 应用领域
TYSEMI 二极管光电二极管IOT局域网
页数 文件大小 规格书
2页 267K
描述
For surface mounted applications in order to optimize board space

P6SMBJ11A 数据手册

 浏览型号P6SMBJ11A的Datasheet PDF文件第2页 
Product specification  
P6SMBJ33A  
Unit: mm  
DO-214AA(SMB)  
Features  
4.12  
3.92  
4.699  
4.064  
For surface mounted applications in order to optimize board space.  
2.108  
1.905  
Low profile package  
3.937  
2.30  
1
2
3.302 2.10  
Built-in strain relief  
Glass passivated junction  
Excellent clamping capability  
Low inductance  
2.65  
2.45  
5.588  
5.080  
5.59  
5.39  
Recommended  
Land Pattern  
2.348  
2.108  
0.305  
0.152  
1.270  
0.762  
0.203  
0.051  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Symbol  
PPPM  
Ratings  
Units  
W
Minimum 600  
100  
Peak Power Dissipation at TA=25, TP=1ms (Note 1,2)  
Peak Forward Surge Current  
(Note 2,3)  
IFSM  
A
Peak Pulse Current Current on 10/1000μs waveform (Note 1)  
IPPM  
See Table  
-55 to +150  
A
Operating and Storage Temperature Range  
Tj, TSTG  
Electrical Characteristics Ta = 25℃  
Max.  
Clamp  
Voltage  
Peak  
Pulse  
Current  
Breakdown  
Voltage  
Reverse  
Stand-off Voltage  
Test  
Current  
Reverse Leakage  
I R @ VRWM  
Part Number  
VBR @ I T  
VRWM  
IT  
VC @ IPP  
I PP  
Min.  
Max.  
V
V
V
mA  
1.0  
V
A
μA  
P6SMBJ33A  
33  
36.7  
42.2  
5
53.3  
11.3  
NOTES:  
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25per  
2.Mounted on 5.0mm2 ( .013mm thick) land areas.  
3.Measured on 8.3ms , single half sine-wave or equivalent square wave , duty cycle= 4 pulses per minutes maximum.  
Marking  
MM  
Marking  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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