5秒后页面跳转
P6SMB18A PDF预览

P6SMB18A

更新时间: 2024-02-08 02:48:49
品牌 Logo 应用领域
MDE 二极管电视光电二极管PC局域网
页数 文件大小 规格书
3页 157K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

P6SMB18A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:SMB, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.64
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:19.8 V
最小击穿电压:16.2 V击穿电压标称值:18 V
最大钳位电压:26.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
参考标准:AEC-Q101最大重复峰值反向电压:14.5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P6SMB18A 数据手册

 浏览型号P6SMB18A的Datasheet PDF文件第2页浏览型号P6SMB18A的Datasheet PDF文件第3页 
MDE Semiconductor, Inc.  
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414  
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com  
P6SMB SERIES  
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR  
VOLTAGE - 6.8 TO 550 Volts  
600 Watt Peak Pulse Power  
FEATURES  
• For surface mounted applications in order to  
optimize board space  
• Glass passivated junction  
• Built-in strain relief  
• Excellent clamping capability  
• Low profile package  
• Low inductance  
• Excellent clamping capability  
• Fast response time: typically less than  
1.0 ps from 0 volts to BV min  
• Typical IR less than 1µA above 10V  
• High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
MECHANICAL DATA  
Case: JEDEC DO-214AA Molded plastic  
TerminalSolder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity: Color band denoted positive end (cathode)  
except Bipolar  
Standard Packaging: 12mm tape(EIA STD RS-481)  
Weight: 0.003 ounces, 0.093 grams  
Dimensions in inches (millimeters)  
DEVICES FOR BIPOLAR APPLICATIONS  
For Bidirectional use CA Suffix for types P6SMB6.8CA thru types P6SMB550CA  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
RATING  
SYMBOL  
PPPM  
VALUE  
Minimum 600  
SEE TABLE 1  
UNITS  
Watts  
Amps  
Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms (Note 1)  
IPPM  
Peak Pulse Current of on 10/1000 µs waveform (Note 1)  
Steady State Power Dissipation at TL = 75°C  
Lead lengths .375", 9.5mm (Note 2)  
PM  
1.0  
Watts  
(AV)  
Peak Forward Surge Current, 8.3ms Single Half Sine-wave  
Superimposed on Rated Load, (JEDEC Method)(Note 3)  
Operatings and Storage Temperature Range  
NOTES:  
100  
Amps  
°C  
IFSM  
TJ, TSTG  
-55 +150  
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.  
2. Mounted on 5.0mm2 (0.03mm thick) Copper Pads to each termina  
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.  
Certified RoHS Compliant  
UL File # E223026  

与P6SMB18A相关器件

型号 品牌 获取价格 描述 数据表
P6SMB18A / CA SWST

获取价格

瞬态电压抑制管
P6SMB18A/52 VISHAY

获取价格

Transient Suppressor,
P6SMB18A/52-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient
P6SMB18A-51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6SMB18A-52 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6SMB18A-AT YAGEO

获取价格

Trans Voltage Suppressor Diode,
P6SMB18A-AT/TR13 YAGEO

获取价格

Trans Voltage Suppressor Diode,
P6SMB18A-AU PANJIT

获取价格

SMB
P6SMB18AAUTO LITTELFUSE

获取价格

Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6SMB18ABK CENTRAL

获取价格

Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon,