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P4SMA20A-E3 PDF预览

P4SMA20A-E3

更新时间: 2023-01-03 00:46:41
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 85K
描述
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient Suppressor

P4SMA20A-E3 数据手册

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New Product  
P4SMA Series  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %  
(300 W above 91 V)  
DO-214AC (SMA)  
• Excellent clamping capability  
• Very fast response time  
PRIMARY CHARACTERISTICS  
• Low incremental surge resistance  
VBR uni-directional  
6.8 V to 540 V  
6.8 V to 220 V  
400 W, 300 W  
3.3 W  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
VBR bi-directional  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PPPM  
PD  
Halogen-free according to IEC 61249-2-21 definition  
IFSM (uni-directional only)  
TJ max.  
40 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. P4SMA10CA).  
Electrical characteristics apply in both directions.  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial and telecommunication.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
400  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink, TA = 50 °C  
IPPM  
See next table  
3.3  
A
PD  
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
40  
A
TJ, TSTG  
- 65 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2, rating is 300 W above 91 V  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Document Number: 89276  
Revision: 20-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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