Datasheet > P4KE350C-B

P4KE350C-B

更新时间： 2024-02-20 11:30:55

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网二极管电视
页数	文件大小	规格书
6页	1079K
描述
TVS DIODE

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中文翻译

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技术参数
数据手册

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P4KE350C-B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN	Reach Compliance Code：	not_compliant
风险等级：	5.11	其他特性：	LOW IMPEDANCE
最大击穿电压：	385 V	最小击穿电压：	315 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	湿度敏感等级：	2
最大非重复峰值反向功率耗散：	400 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
最大重复峰值反向电压：	300 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

P4KE350C-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 400W > P4KE series

Pb e3

RoHS

P4KE Series

Description

Bi-directional

The P4KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Uni-directional

Features

• 400W peak pulse

• Typical I_Rless than 1μA

when V_BRmin>12V

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Glass passivated chip

junction in DO-41 Package

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

• High temperature

to reﬂow soldering

guaranteed: 260°C/40sec

/ 0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

400

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1), (Note 4)

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Steady State Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC

P_D

1.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

30kV(Air), 30kV (Contact) • Pb-free E3 means 2nd

I_FSM

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Maximum Instantaneous Forward

Voltage at 25A for Unidirectional

Only (Note 3)

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 175 °C

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

• Low incremental surge

resistance

TypicalThermal Resistance Junction

to Ambient

°C/W

100

Notes:

Applications

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

3. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

computer, industrial and consumer electronic applications.

4. The P_PPMof stacked-die parts is 600W and please contact littelfuse for the detail

stacked-die parts.

Functional Diagram

Additional Infomarion

Bi-directional

Datasheet

Samples

Resources

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/20/15

12 3 4 5 6

中文翻译

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与P4KE350C-B相关器件

型号	品牌	获取价格	描述	数据表
P4KE350C-E3/54	VISHAY	获取价格	TVS DIODE 284V 504V DO204AL
P4KE350CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 284V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P4KE350C-G	COMCHIP	获取价格	400W Transient Voltage Suppressor
P4KE350CH01	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,
P4KE350CH02	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,
P4KE350CH02-3	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,
P4KE350CH02-5	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,
P4KE350CH03	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,
P4KE350CH03-1	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,
P4KE350CH03-2	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,

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