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P4KE33 PDF预览

P4KE33

更新时间: 2024-02-17 04:42:32
品牌 Logo 应用领域
商升特 - SEMTECH /
页数 文件大小 规格书
4页 428K
描述
TRANSIENT VOLTAGE SUPPRESSORS

P4KE33 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.58二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches:1

P4KE33 数据手册

 浏览型号P4KE33的Datasheet PDF文件第2页浏览型号P4KE33的Datasheet PDF文件第3页浏览型号P4KE33的Datasheet PDF文件第4页 
P4KE Series  
TRANSIENT VOLTAGE SUPPRESSORS  
Features  
• Glass passivated junction  
• 400 W pulse capability on 10/1000 µs wave form  
• Excellent clamping capability  
• Low Zener impedance  
• Fast response time  
Mechanical Data  
• Case: DO-41 molded plastic body  
Terminals: Solder axial plated, solderable per MIL-STD-750,  
method 2026  
• Polarity: Color band denotes cathode end  
Devices for bidirectional applications  
• For bidirectional use C or CA suffix for types P4KE6.8 thru types P4KE440A (e.g. P4KE6.8C, P4KE440CA)  
• Electrical characteristics apply in both directions  
O
Absolute Maximum Ratings (Ta = 25 C unless otherwise specified)  
Parameter  
Symbol  
PPPK  
Value  
Min. 400  
1
Unit  
W
Peak Power Dissipation 1)  
Steady State Power Dissipation at Tj = 75 OC Lead Length 0.375"(9.5 mm) 2)  
Peak Forward Surge Current 8.3 ms Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method), Unidirectional only 3)  
PD  
W
IFSM  
40  
A
Maximum Instantaneous Forward Voltage at 25 A, for unidirectional only 4)  
VF  
3.5 / 6.5  
V
Operating Junction and Storage Temperature Range  
Tj, Tstg  
- 55 to + 175  
OC  
1) Non-repetitive current pulse and derated above TA = 25 OC.  
2) Mounted on Copper pads area of 1.6 X 1.6" (40 X 40 mm).  
3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. For  
uni-directional devices only.  
4) VF: 3.5 V Max. for types of V(BR) 200 V, and VF: 6.5 V Max. for types of V(BR) > 200 V.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 13/12/2008  
J

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