5秒后页面跳转
P4KE11-G PDF预览

P4KE11-G

更新时间: 2023-02-26 15:16:01
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
6页 114K
描述
Trans Voltage Suppressor Diode, 8.9V V(RWM), Unidirectional,

P4KE11-G 数据手册

 浏览型号P4KE11-G的Datasheet PDF文件第2页浏览型号P4KE11-G的Datasheet PDF文件第3页浏览型号P4KE11-G的Datasheet PDF文件第4页浏览型号P4KE11-G的Datasheet PDF文件第5页浏览型号P4KE11-G的Datasheet PDF文件第6页 
COMCHIP  
440000WW TTrraannssiieenntt VVoollttaaggee SSuupppprreessssoorr  
SMD Diodes Specialist  
P4KE-G Series  
Stand-off Voltage: 6.8 ~ 600V  
Power Dissipation: 400 Watts  
RoHS Device  
DO-41  
Features  
-Glass passivated chip  
-Low leakage  
-Uni and Bidirection unit  
0.033(0.84)  
0.028(0.71)  
DIA.  
1.000(25.40)  
MIN.  
-Excellent clamping capability  
-The plastic material has UL recognition 94V-0  
-Fast response time: typically less than 1.0pS from  
0 volts to BV min  
0.205(5.21)  
0.165(4.19)  
0.117(2.97)  
0.090(2.29)  
DIA.  
Mechanical Data  
1.000(25.40)  
MIN.  
-Case: Molded plastic DO-41  
-Polarity: By cathode band denotes unidirectional  
device none cathode band denoted bi-directional  
device  
Dimensions in inches and (millimeter)  
-Weight: 0.34 gram  
Maximum Ratings and Electrical Characteristics  
Rating at 25 OC ambient unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Symbol  
Parameter  
Value  
Unit  
W
Peak power dissipation a 10/1000μs waveform  
PPP  
400  
(Note 1)  
Peak pulse current with a 10/1000μs waveform  
IPP  
PD  
See Next Table  
1.0  
A
(Note 1)  
O
W
C
Power dissipation on infinite heatsink at TL=75  
Peak forward surge current, 8.3mS single  
half sine-wave unidirectional only(Note 2)  
IFSM  
VF  
40  
A
V
Maximum instantaneous forward voltage  
at 25A for unidirectional only (Note 3)  
3.5/5.0  
Operating junction and storage temperature  
range  
OC  
TJ, TSTG  
-55 to +150  
NTOES:  
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 OC per fig. 1.  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V.  
REV:B  
Page 1  
QW-BTV05  

P4KE11-G 替代型号

型号 品牌 替代类型 描述 数据表
P4KE11HE3/54 VISHAY

功能相似

TVS DIODE 8.92V 16.2V DO204AL
P4KE11-E3/54 VISHAY

功能相似

TVS DIODE 8.92V 16.2V DO204AL
BZW04P9V4 EIC

功能相似

TRANSIENT VOLTAGE SUPPRESSOR

与P4KE11-G相关器件

型号 品牌 获取价格 描述 数据表
P4KE11-GT3 SENSITRON

获取价格

Trans Voltage Suppressor Diode, 400W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE11H02-1 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H02-5 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H03 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H03-2 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H03-3 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H04 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H07 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H08 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41
P4KE11H09 RECTRON

获取价格

Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-41