Datasheet > P20M40CT

P20M40CT

更新时间： 2024-09-28 04:11:23

品牌	Logo	应用领域
SEMIWELL		/
页数	文件大小	规格书
3页	188K
描述
20A Schottky Barrier Rectifier

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中文翻译

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数据手册

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P20M40CT 数据手册

PROVISIONAL

SemiWell Semiconductor

P20M40CT

20A Schottky Barrier Rectifier

Symbol

Features

ꢀ

ꢀ Plastic material meets UL94V-0

ꢀ Metal silicon junction

ꢀ Very low forward voltage drop

ꢀ

ꢀ High current / High surge capability

ꢀ Guarding for over voltage protection

ꢀ Lead solderable per MIL-STD202,method 208 guaranteed

ꢀ Lead temperature for soldering purpose 250°C Max

for 10 second

TO-220

ꢀ Weight : 2.2 gram (approximately)

General Description

The P20M40CT schottky Rectifier has been designed for

applcations requiring low forward voltage drop and switching

power supply, dc-dc converter, free-wheeling diode, battery

charging, polarity protection application.

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

Repetitive Peak Reverse Voltage

RRM

Maximum DC Reverse Voltage

Average Forward Current @ T = 105°C

Per Diode

F(AV)

Total Device

Non-Repetitive Peak Surge Current

(Surge applied at rated load conditions half sinewave,single phase, 60Hz)

250

9.0

FSM

Non-Repetitive Avalanche Energy @ T =25°C , Vdd = 15V , L=18uH

Eas

°C

Maximum Junction Temperature

Storage Temperature Range

- 65 ~ 125

- 65 ~ 150

STG

Thermal Characteristics

Symbol

Parameter

Value

Units

Maximum Thermal Resistance, Junction-to-Case ( per diode )

2.5

°C/W

θJC

Nov, 2002. Rev. 0

1/3

12 3

中文翻译

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