Datasheet > P0330SC04A

P0330SC04A

更新时间： 2024-02-25 17:27:30

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
13页	1697K
描述
Silicon Controlled Rectifier,

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技术参数
数据手册

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P0330SC04A 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.72	触发设备类型：	SCR
Base Number Matches：	1

P0330SC04A 数据手册

Fast Turn-off Thyristor P0330SC04x-08x

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(J-Hs)be the steady-state d.c. thermal resistance (junction to sink)

and T_SINKbe the heat sink temperature.

Then the average dissipation will be:

W_AV= E_P× f and T_{SINK (max.)}=125 -

(

W_AV× R_th

)

(

J -Hs

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 150µs integration time.

150µs

Q_rr= i_rr.dt

i.e.

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

T_{SINK (new)}= T_{SINK (original)}- E ×

(

k + f × R_th

)

(

J -Hs

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_th(J-Hs)= d.c. thermal resistance (°C/W).

Data Sheet. Type P0330SC04x-08x Issue 3

Page 4 of 12

October 2014

1 2 345 6 7...13

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