Datasheet > P0248SC12E

P0248SC12E

更新时间： 2024-02-04 04:21:36

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
13页	1648K
描述
Silicon Controlled Rectifier, 355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P0248SC12E 技术参数

生命周期：	Transferred	包装说明：	POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.69	配置：	SINGLE
最大直流栅极触发电流：	200 mA	JESD-30 代码：	O-MUPM-H3
元件数量：	1	端子数量：	3
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	POST/STUD MOUNT	认证状态：	Not Qualified
最大均方根通态电流：	355 A	断态重复峰值电压：	1200 V
重复峰值反向电压：	1200 V	表面贴装：	NO
端子形式：	HIGH CURRENT CABLE	端子位置：	UPPER
触发设备类型：	SCR	Base Number Matches：	1

P0248SC12E 数据手册

Fast Turn-off Thyristor P0248SC12x

The total dissipation is now given by:

W =W_(original)+ E × f

(TOT)

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_SINK

= T_SINK

)

(

E × R_th× f

)

(

new

)

(

original

Where T_{SINK (new)}is the required maximum heat sink temperature and

T_{SINK (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

12.3 Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

C_S× ^di

R²= 4×

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

= Snubber resistance

13.0 Gate Drive

The recommended pulse gate drive is 30V, 15W with a short-circuit current rise time of not more than

0.5µs. This gate drive must be applied when using the full di/dt capability of the device.

The duration of pulse may need to be configured with respect to the application but should be no shorter

than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in

charge to trigger.

Data Sheet. Type P0248SC12x Issue 2

Page 5 of 12

October 2014

1 2 3 456 7 8...13

下载PDF

与P0248SC12E相关器件

型号	品牌	描述	获取价格	数据表
P0248SC12F	LITTELFUSE	Silicon Controlled Rectifier, 355 A, 1200 V, SCR	获取价格
P0248SD10D	IXYS	Silicon Controlled Rectifier, 355A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element	获取价格
P0248SD10E	IXYS	Silicon Controlled Rectifier, 355A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element	获取价格
P0248SD12D	IXYS	Silicon Controlled Rectifier, 355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element	获取价格
P0248SD12E	IXYS	Silicon Controlled Rectifier, 355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element	获取价格
P0248SD12F	LITTELFUSE	Silicon Controlled Rectifier, 355A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,	获取价格

与P0248SC12E相关文章

SI2301 N沟道MOSFET：资料手册参数分析
2024-05-08

9
ADC0809逐次逼近寄存器型模数转换器：资料手册参数分析
2024-05-08

7
AD9361捷变收发器：全面参数解析与关键特性概览
2024-05-08

6
IRF3205功率MOSFET：资料手册参数分析
2024-05-08

7

产品中心

服务支持

精选活动

关于我们

帮助中心

P0248SC12E

P0248SC12E 技术参数

P0248SC12E 数据手册

与P0248SC12E相关器件

与P0248SC12E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P0248SC12E

P0248SC12E 技术参数

P0248SC12E 数据手册

与P0248SC12E相关器件

与P0248SC12E相关文章

您还可以找

您在本页遇到什么问题？