Datasheet > P0102AA-5AL3

P0102AA-5AL3

更新时间： 2022-03-24 13:12:56

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
11页	125K
描述
Sensitive standard SCRs up to 0.8 A

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数据手册

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P0102AA-5AL3 数据手册

Characteristics

P010xx

Characteristics

Table 2.

Symbol

Absolute ratings (limiting values) P010xxA and P010xxN

Parameter

Value

Unit

TO-92

T_l= 55 °C

I_T(RMS)RMS on-state current (180° conduction angle)

0.8

SOT-223

TO-92

T_amb= 70 °C

T_l= 55 °C

IT_(AV)

Average on-state current (180° conduction angle)

Non repetitive surge peak on-state current

0.5

SOT-223

t_p= 8.3 ms

t_p= 10 ms

T_amb= 70 °C

I_TSM

T_j= 25 °C

I t

I t Value for fusing

T_j= 25 °C

0.24

A²S

Critical rate of rise of on-state current

dI/dt

I_GM

F = 60 Hz

t_p= 20 µs

T_j= 125 °C

A/µs

_G= 2 x I_GT, t_r≤ 100 ns

Peak gate current

T_j= 125 °C

P_G(AV)Average gate power dissipation

0.1

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Table 3.

Symbol

Absolute ratings (limiting values) P010xxL

Parameter

Value

Unit

I_T(RMS)RMS on-state current (180° conduction angle)

T_amb= 36 °C

0.25

0.16

IT_(AV)

Average on-state current (180° conduction angle)

t_p= 8.3 ms

t_p= 10 ms

I_TSM

Non repetitive surge peak on-state current

T_j= 25 °C

I t

I t Value for fusing

T_j= 25 °C

0.18

A²S

Critical rate of rise of on-state current

I_G= 2 x I_GT, t_r≤ 100 ns

dI/dt

I_GM

F = 60 Hz

t_p= 20 µs

T_j= 125 °C

A/µs

Peak gate current

T_j= 125 °C

0.5

P_G(AV)Average gate power dissipation

0.02

T_stg

T_j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

2/11

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