Datasheet > P0102AA-1AA3

P0102AA-1AA3

更新时间： 2022-03-24 13:12:56

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
11页	125K
描述
Sensitive standard SCRs up to 0.8 A

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P0102AA-1AA3 数据手册

P010xx

Characteristics

Figure 5.

Average and DC on-state current

vs. case temperature P010xxL

Figure 6.

Relative variation of thermal

impedance junction to ambient

vs. pulse duration

(A)

T(AV)

K=[Z

]

th(j-a) th(j-a)

0.30

0.25

0.20

0.15

0.10

0.05

0.00

1.00

0.10

0.01

D.C.

SOT23-3L

α = 180°

TO-92

SOT-223

t (s)

T (°C)

case

100

125

1E+0

5E+2

1E-2

1E-1

1E+1

1E+2

Figure 7.

Relative variation of gate trigger,

holding, and latching currents

vs. junction temperature

Figure 8.

Relative variation of holding

current vs. gate-cathode resistance

I [R ] / I [R =1kΩ]

,I ,I [T ] / I ,I ,I [T =25°C]

T_j= 25°C

Typical values

I_GT

I_H& I_L

R_GK= 1kΩ

T (°C)

(kΩ)

1E-2

-40

-20

100

120

140

1E-1

1E+0

1E+1

Figure 9.

Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity

vs. gate-cathode resistance vs. gate-cathode capacitance

dV/dt[C ] / dV/dt[

R =1kΩ]

dV/dt[R ] / dV/dt[R =1kΩ]

10.0

V_D= 0.67 x V_DRM

T_j= 125°C

R_GK= 1kΩ

T_j= 125°C

V_D= 0.67 x V_DRM

Typical values

1.0

Typical values

(kΩ)

(nF)

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

5/11

1 2 3 456 7 8...11

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