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HL7851G PDF预览

HL7851G

更新时间: 2024-01-14 17:57:15
品牌 Logo 应用领域
OPNEXT 二极管激光二极管
页数 文件大小 规格书
4页 93K
描述
GaAlAs Laser Diode

HL7851G 技术参数

生命周期:Obsolete包装说明:LD/G2, 3 PIN
Reach Compliance Code:unknown风险等级:5.84
配置:SINGLE WITH BUILT-IN PHOTO DIODE最大正向电流:0.18 A
最大正向电压:2.7 V安装特点:THROUGH HOLE MOUNT
功能数量:1最高工作温度:60 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:50 mW峰值波长:785 nm
半导体材料:GaAlAs形状:ROUND
尺寸:2 mm子类别:Laser Diodes
表面贴装:NO最大阈值电流:70 mA

HL7851G 数据手册

 浏览型号HL7851G的Datasheet PDF文件第2页浏览型号HL7851G的Datasheet PDF文件第3页浏览型号HL7851G的Datasheet PDF文件第4页 
HL7851G  
GaAlAs Laser Diode  
ODE-208-062A (Z)  
Rev.1  
Dec. 04, 2006  
Description  
The HL7851G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is  
suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic  
sealing of the package assures high reliability.  
Features  
Package Type  
HL7851G: G2  
Internal Circuit  
Visible light output: λp = 785 nm Typ  
Small beam ellipticity: 9.5:23  
High output power: 50 mW (CW)  
Built-in monitor photodiode  
1
3
PD  
LD  
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
50  
60 *  
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
2
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +60  
–40 to +85  
°C  
Tstg  
°C  
Note: Maximum 50% duty cycle, maximum 1 µs pulse width.  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Symbol  
Ith  
Min  
Typ  
45  
Max  
Unit  
Test Conditions  
Threshold current  
70  
0.7  
165  
2.7  
795  
12  
mA  
Slope efficiency  
ηs  
0.35  
0.55  
135  
2.3  
785  
9.5  
23  
mW/mA 40 (mW) / (I(45mW) – I(5mW))  
LD Operating current  
LD Operating voltage  
Lasing wavelength  
Beam divergence (parallel)  
IOP  
VOP  
λp  
θ//  
mA  
V
PO = 50 mW  
PO = 50 mW  
775  
8
nm  
°
PO = 50 mW  
PO = 50 mW, FWHM  
PO = 50 mW, FWHM  
Beam divergence  
(perpendicular)  
θ⊥  
18  
28  
°
Monitor current  
Astigmatism  
IS  
30  
45  
5
150  
µA  
PO = 5 mW, VR(PD) = 5 V  
PO = 5 mW, NA = 0.4  
AS  
µm  
Rev.1 Dec. 04, 2006 page 1 of 4  

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