HL6316G
AlGaInP Laser Diodes
ODE-208-026 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as
light sources for laser pointers and optical equipment.
Features
Package Type
• HL6316G: G2
Internal Circuit
•
•
•
•
•
•
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 3 mW CW
Low operating current: 30 mA Typ
Low operating voltage: 2.7 V Max
TM mode oscillation
1
3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
mW
V
PO
3
PO(pulse)
VR(LD)
VR(PD)
Topr
5 *
2
PD reverse voltage
30
V
Operating temperature
Storage temperature
–10 to +50
–40 to +85
°C
Tstg
°C
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Operating current
Operating voltage
Symbol
Ith
Min
—
—
—
6
Typ
25
30
—
Max
35
Unit
Test Conditions
mA
mA
V
—
IOP
VOP
θ//
42
PO = 3 mW
PO = 3 mW
PO = 3 mW
2.7
10
Beam divergence
8
°
parallel to the junction
Beam divergence
θ⊥
23
30
39
°
PO = 3 mW
perpendicular to the junction
Lasing wavelength
Monitor current
λp
630
0.1
635
0.3
640
0.6
nm
mA
PO = 3 mW
IS
PO = 3 mW, VR(PD) = 5 V
Rev.0 Jul 01, 2005 page 1 of 4