Datasheet > HL6316G

HL6316G

更新时间： 2024-02-04 05:18:52

品牌	Logo	应用领域
OPNEXT		半导体光电二极管激光二极管
页数	文件大小	规格书
4页	93K
描述
AlGaInP Laser Diodes

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HL6316G 技术参数

生命周期：	Transferred	包装说明：	LD/G2, 3 PIN
Reach Compliance Code：	compliant	风险等级：	5.02
光电设备类型：	LASER DIODE	Base Number Matches：	1

HL6316G 数据手册

HL6316G

AlGaInP Laser Diodes

ODE-208-026 (Z)

Rev.0

Jul. 01, 2005

Description

The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as

light sources for laser pointers and optical equipment.

Features

Package Type

• HL6316G: G2

Internal Circuit

•

Visible light output: 635 nm Typ

Single longitudinal mode

Optical output power: 3 mW CW

Low operating current: 30 mA Typ

Low operating voltage: 2.7 V Max

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Pulse optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

P_O(pulse)

V_R(LD)

V_R(PD)

Topr

5 *

PD reverse voltage

Operating temperature

Storage temperature

–10 to +50

–40 to +85

°C

Tstg

°C

Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

—

Max

Unit

Test Conditions

—

I_OP

V_OP

θ//

P_O= 3 mW

2.7

Beam divergence

parallel to the junction

Beam divergence

θ⊥

P_O= 3 mW

perpendicular to the junction

Lasing wavelength

Monitor current

λp

630

0.1

635

0.3

640

0.6

P_O= 3 mW

I_S

P_O= 3 mW, V_R(PD)= 5 V

Rev.0 Jul 01, 2005 page 1 of 4

12 3 4

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