5秒后页面跳转
2N7002W PDF预览

2N7002W

更新时间: 2024-02-10 15:15:34
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管
页数 文件大小 规格书
5页 103K
描述
Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70

2N7002W 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10Base Number Matches:1

2N7002W 数据手册

 浏览型号2N7002W的Datasheet PDF文件第2页浏览型号2N7002W的Datasheet PDF文件第3页浏览型号2N7002W的Datasheet PDF文件第4页浏览型号2N7002W的Datasheet PDF文件第5页 
2N7002W  
Small Signal MOSFET  
60 V, 340 mA, Single, NChannel, SC70  
Features  
ESD Protected  
http://onsemi.com  
Low R  
DS(on)  
Small Footprint Surface Mount Package  
This is a PbFree Device  
V
R
DS(on)  
MAX  
I MAX  
D
(Note 1)  
(BR)DSS  
60 V  
1.6 W @ 10 V  
2.5 W @ 4.5 V  
340 mA  
Applications  
Low Side Load Switch  
Level Shift Circuits  
DCDC Converter  
Portable Applications i.e. DSC, PDA, Cell Phone, etc.  
Simplified Schematic  
1
2
Gate  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Rating  
DraintoSource Voltage  
GatetoSource Voltage  
Symbol  
Value  
60  
Unit  
V
3
Drain  
V
DSS  
Source  
V
±20  
V
GS  
Drain Current (Note 1)  
Steady State  
I
mA  
D
T = 25°C  
A
310  
220  
(Top View)  
A
T = 85°C  
t < 5 s  
T = 25°C  
A
340  
240  
A
T = 85°C  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Power Dissipation (Note 1)  
Steady State  
t < 5 s  
P
mW  
D
280  
330  
Drain  
3
Pulsed Drain Current (t = 10 ms)  
I
1.4  
A
p
DM  
Operating Junction and Storage  
Temperature Range  
T , T  
55 to  
°C  
J
STG  
+150  
SC70/SOT323  
CASE 419  
71  
G
Source Current (Body Diode)  
I
250  
260  
mA  
S
STYLE 8  
1
2
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
°C  
L
Gate  
Source  
GateSource ESD Rating  
ESD  
900  
V
71  
G
= Device Code  
= PbFree Package  
(HBM, Method 3015)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
Device  
2N7002WT1G  
Package  
Shipping  
THERMAL CHARACTERISTICS  
SC70  
(PbFree)  
3000/Tape & Reel  
Characteristic  
Symbol  
Max  
Unit  
JunctiontoAmbient Steady State  
(Note 1)  
R
q
JA  
450  
°C/W  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
JunctiontoAmbient t 5 s (Note 1)  
R
q
JA  
375  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in  
sq [1 oz] including traces)  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2007 Rev. 2  
2N7002W/D  
 

与2N7002W相关器件

型号 品牌 描述 获取价格 数据表
2N7002W_05 PANJIT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

获取价格

2N7002W_07 PANJIT 60V N-Channel Enhancement Mode MOSFET

获取价格

2N7002W_08 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

获取价格

2N7002W_1 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

获取价格

2N7002W_10 FAIRCHILD N-Channel Enhancement Mode Field Effect Transistor

获取价格

2N7002W_11 MCC N-Channel Enhancement Mode Field Effect Transistor

获取价格