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ONET3301PARGTR PDF预览

ONET3301PARGTR

更新时间: 2024-02-08 23:09:55
品牌 Logo 应用领域
德州仪器 - TI ATM集成电路SONET集成电路SDH集成电路电信集成电路电信电路放大器异步传输模式
页数 文件大小 规格书
12页 254K
描述
155-MBPS TO 3.3-GBPS LIMITING AMPLIFIER

ONET3301PARGTR 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFN
包装说明:3 X 3 MM, 0.50 MM PITCH, GREEN, PLASTIC, QFN-16针数:16
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:5.23
Is Samacsys:N应用程序:SONET;SDH
JESD-30 代码:S-PQCC-N16JESD-609代码:e4
长度:3 mm湿度敏感等级:2
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:HVQCCN
封装等效代码:LCC16,.12SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):260
电源:3.3 V认证状态:Not Qualified
座面最大高度:1 mm子类别:ATM/SONET/SDH ICs
最大压摆率:0.04 mA标称供电电压:3.3 V
表面贴装:YES电信集成电路类型:ATM/SONET/SDH SUPPORT CIRCUIT
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

ONET3301PARGTR 数据手册

 浏览型号ONET3301PARGTR的Datasheet PDF文件第1页浏览型号ONET3301PARGTR的Datasheet PDF文件第3页浏览型号ONET3301PARGTR的Datasheet PDF文件第4页浏览型号ONET3301PARGTR的Datasheet PDF文件第5页浏览型号ONET3301PARGTR的Datasheet PDF文件第6页浏览型号ONET3301PARGTR的Datasheet PDF文件第7页 
ꢀꢁ ꢂꢃ ꢄ ꢄ ꢅꢆ ꢇꢈ  
ꢆꢉ ꢉꢊꢋ ꢌ ꢍ ꢎ ꢃꢀ ꢄ ꢏ ꢄ ꢊꢐꢌꢍ ꢎ ꢑꢒ ꢋ ꢒ ꢃꢒ ꢁꢐ ꢈꢋ ꢇꢑꢒ ꢓ ꢒꢂꢔ  
SLLS603B − MARCH 2004 − REVISED DECEMBER 2004  
block diagram  
A simplified block diagram of the ONET3301PA is shown in Figure 1.  
This compact, low power 3.3-Gbps limiting amplifier consists of a high-speed data path with offset cancellation  
block, a loss of signal and RSSI detection block, and a bandgap voltage reference and bias current generation  
block.  
The limiting amplifier requires a single 3.3-V supply voltage. All circuit parts are described in detail below.  
COC2 COC1  
VCC  
Offset  
Cancellation  
GND  
OUTPOL  
VCCO  
DIN+  
DIN−  
+
+
+
+
+
DOUT+  
DOUT−  
CML  
Output  
Buffer  
Input Buffer  
Gain Stage  
Gain Stage  
Gain Stage  
DISABLE  
Bandgap Voltage  
Reference and  
Bias Current  
Generation  
Loss of Signal  
and  
RSSI Detection  
LOS  
RSSI  
TH  
Figure 1. Block Diagram  
high-speed data path  
The high-speed data signal is applied to the data path by means of the input signal pins DIN+/DIN–. The data  
path consists of the input stage with 2 × 50-on-chip line termination to VCC, three gain stages, which provide  
the required typical gain of about 50 dB and a CML output stage. The amplified data output signal is available  
at the output pins DOUT+/DOUT–, which provide 2 × 50-back-termination to VCCO. The output stage also  
includes a data polarity switching function, which is controlled by the OUTPOL input and a disable function,  
controlled by the signal applied to the DISABLE input pin.  
An offset cancellation compensates inevitable internal offset voltages and thus ensures proper operation even  
for small input data signals.  
The low frequency cutoff is as low as 45 kHz with the built-in filter capacitor.  
For applications, which require even lower cutoff frequencies, an additional external filter capacitor may be  
connected to the COC1/COC2 pins.  
loss of signal and RSSI detection  
The output signal of the input buffer is monitored by the loss of signal and RSSI detection circuitry. In this block  
a signal is generated, which is linear proportional to the input amplitude over a wide input voltage range. This  
signal is available at the RSSI output pin.  
Furthermore, this circuit block compares the input signal to a threshold, which can be programmed by means  
of an external resistor connected to the TH pin. If the input signal falls below the specified threshold, a loss of  
signal is indicated at the LOS pin.  
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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