Datasheet > OHT10CB

OHT10CB

更新时间： 2022-11-26 11:39:24

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	136K
描述
Photo transistors

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OHT10CB 数据手册

OHT10CB

The OHT10CB is a high-sensitivity NPN silicon phototransistor

Photo transistors

mounted in durable, hermetically sealed TO-18 metal can which provide years

of reliable performance, even under demanding conditions such as use outdoors.

FEATURES

● Narrow angular response

● Durable

● High reliability in demanding environments

● Two leads( Collector, Emitter )

APPLICATIONS

● Optical counters

● Optical detectors

● Infrared sensors

● Encoders

● Smoke detectors

ELECTRO-OPTICAL CHARACTERISTICS

( Ta=25℃ )

Item

Collector dark current

Light current

Symbol

ICEO

Cond.

Min.

1.5

Typ.

Max.

Unit

㎁

VCEO=10V

200

VCE=10v,200Lux

Ic=5㎃,2000Lux

Vcc=10v,Ic=5㎃

RL=100Ω

6.0

㎃

C-E saturation voltage

V^ce(sat)

0.2

0.4

Rise time

8.0

usec.

㎚

Switching speeds

Fall time

500~1,050

880

Spectral sensitivity

Peak wavelenght

Half angle

λp

㎚

Δθ

±15

deg.

MAXIMUM RATINGS

(Ta=25℃)

Unit

Item

C-E voltage

Rating

Symbol

V^CEO

E-C voltage

V^ECO

Collector current

Collector power dissipation

Operating temp.

Storage temp.

㎃

℃

150

-30∼+125

-50∼+150

260

Topr.

Tstg.

Tsol.

Soldering temp.⁽¹⁾

(1)For MAX.5seconds at the position of 2mm from the package

OPTO HiTEC.Co.,Ltd.

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