5秒后页面跳转
NST1602CLTWG PDF预览

NST1602CLTWG

更新时间: 2023-06-19 14:32:06
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 236K
描述
Bipolar Transistor 160V, 1.5A NPN Low VCE(sat) Single

NST1602CLTWG 数据手册

 浏览型号NST1602CLTWG的Datasheet PDF文件第2页浏览型号NST1602CLTWG的Datasheet PDF文件第3页浏览型号NST1602CLTWG的Datasheet PDF文件第4页浏览型号NST1602CLTWG的Datasheet PDF文件第5页 
Bipolar Transistor  
160 V, 1.5 A, Low VCE(sat) NPN Single  
LFPAK  
Product Preview  
NST1602CLT  
This device is bipolar junction transistor featuring high current, low  
saturation voltage, and high speed switching.  
Suitable for automotive applications. AEC−Q101 qualified and  
PPAP capable.  
www.onsemi.com  
Features  
Complement to NST1601CLT  
Large Current Capacitance  
LFPAK8 3.3x3.3, 0.65P  
CASE 760AD  
Low Collector to Emitter Saturation Voltage  
Thin Profile LFPAK8 3.3 x 3.3 mm Package  
High−Speed Switching  
ELECTRICAL CONNECTION  
High Allowable Power Dissipation  
AEC−Q101 Qualified and PPAP Capable  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
Load Switch  
Gate Driver Buffer  
DC−DC Converters  
MARKING DIAGRAM  
XXXXX  
XXXXX  
Specifications  
AWLYWG  
ABSOLUTE MAXIMUM RATING at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
V
XXXX = Specific Device Code  
A
= Assembly Location  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
CBO  
V
CEO  
V
EBO  
180  
WL = Wafer Lot  
160  
V
Y
= Year  
6
V
W
G
= Work Week  
= Pb−Free Package  
I
C
1.5  
A
Collector Current (Pulse)  
Collector Dissipation (Note 1)  
I
3
A
CP  
P
1
15  
W
C
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
PC (Tc = 25°C)  
Junction Temperature  
Storage Temperature  
Tj  
175  
°C  
°C  
Tstg  
55 to +175  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface mounted on FR board  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
February, 2020 − Rev. P0  
NST1602CLT/D  
 

与NST1602CLTWG相关器件

型号 品牌 获取价格 描述 数据表
NST1625R DIODES

获取价格

Rectifier Diode, Schottky, 1 Element, 16A, 20V V(RRM),
NST175 NOVOSENSE

获取价格

NST175是一款低功耗高精度数字温度传感器,是负温度系数(NTC)和正温度系数(PTC)
NST18 MICRONETICS

获取价格

BROADBAND COAXIAL MICROWAVE NOISE SOURCES
NST18-A MICRONETICS

获取价格

Broadband Microwave Coaxial Noise Sources 10 MHz to 18 GHz
NST18-B MICRONETICS

获取价格

Broadband Microwave Coaxial Noise Sources 10 MHz to 18 GHz
NST18L MICRONETICS

获取价格

BROADBAND COAXIAL MICROWAVE NOISE SOURCES
NST18L-A MICRONETICS

获取价格

Broadband Microwave Coaxial Noise Sources 10 MHz to 18 GHz
NST18L-B MICRONETICS

获取价格

Broadband Microwave Coaxial Noise Sources 10 MHz to 18 GHz
NST20 NOVOSENSE

获取价格

NST20是一系列精密 CMOS 集成电路线性模拟输出温度传感器。输入电压范围从2.4V到
NST200F06 NELLSEMI

获取价格

Ultrafast Soft Recovery Diode