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NST200F120 PDF预览

NST200F120

更新时间: 2024-01-24 14:00:17
品牌 Logo 应用领域
尼尔 - NELLSEMI 二极管超快软恢复二极管
页数 文件大小 规格书
5页 295K
描述
FRED Ultrafast Soft Recovery Diode, 100A × 2

NST200F120 数据手册

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RoHS  
RoHS  
NST200F120 / NST200F120-A  
SEMICONDUCTOR  
Nell High Power Products  
FRED  
Ultrafast Soft Recovery Diode, 100A × 2  
Available  
RoHS*  
COMPLIANT  
FEATURES  
Fast recovery time characteristic  
Electrically isolated base plate  
Large creepage distance between terminal  
Simplified mechanicaldesigns, rapid assembly  
Compliant to RoHS  
Designed and for industrial level  
DESCRIPTION  
CIRCUIT CONFIGURATION  
This SOT-227 modules with FRED rectifier are available  
in two basic configurations. They are the antiparallel  
and the parallel configurations. The antiparallel configuration  
NST200F120-A is used for simple series rectifier and high  
voltage application. The parallel configuration NST200F120 is  
used for simple parallel rectifier and high current application.  
The semiconductor in the SOT-227 package is isolated from  
the copper base plate, allowing for common heatsinks and  
compact assemblies to be built. These modules are intended  
for general applications such as power supplies, battery  
3
4
3
4
2
1
2
1
Anti-Parallel  
Parallel  
NST200F120  
chargers, electronic welders, motor control, DC chopper, and  
inverters.  
NST200F120-A  
APPLICATIONS  
Switching power supplies  
Inverters  
Motor controllers  
Converters  
PRODUCT SUMMARY  
VR  
1200 V  
1.8 V  
Snubber diodes  
Uninterruptible power supplies (UPS)  
Induction heating  
VF(typical) at 125 ºC  
trr (typical)  
47 ns  
IF(DC) at TC per diode  
93A at 80 ºC  
High speed rectifiers  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
UNITS  
VALUES  
1200  
93  
VR  
V
Cathode to anode voltage  
per leg  
per module  
IF  
Tc = 80 ºC  
Maximum continuous forward current  
186  
A
IFSM  
TJ = 25 ºC  
t = 1 minute  
Tc = 25 ºC  
Single pulse forward current  
900  
VISOL  
RMS isolation voltage, any terminal to case  
Maximum power dissipation  
2500  
416  
V
PD  
W
°C  
166  
Tc = 100 ºC  
TJ, TStg  
- 55 to 150  
Operating junction and storage temperature range  
Page 1 of 5  

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