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NSD1025E-DHMSR PDF预览

NSD1025E-DHMSR

更新时间: 2024-04-09 18:58:24
品牌 Logo 应用领域
纳芯微 - NOVOSENSE 栅极驱动双极性晶体管驱动器
页数 文件大小 规格书
20页 2106K
描述
NSD1025 是一款双通道、非反相、高速、低侧的栅极驱动器,此产品能够有效地驱动MOSFET/IGBT。 为了增加稳定耐用性, NSD1025在输入引脚上增加耐负压 –10V的能力。 NSD10

NSD1025E-DHMSR 数据手册

 浏览型号NSD1025E-DHMSR的Datasheet PDF文件第14页浏览型号NSD1025E-DHMSR的Datasheet PDF文件第15页浏览型号NSD1025E-DHMSR的Datasheet PDF文件第16页浏览型号NSD1025E-DHMSR的Datasheet PDF文件第17页浏览型号NSD1025E-DHMSR的Datasheet PDF文件第18页浏览型号NSD1025E-DHMSR的Datasheet PDF文件第19页 
NSD1025E  
Datasheet (EN) 1.1  
IMPORTANT NOTICE  
The information given in this document shall in no event be regarded as any warranty or authorization of, express or implied,  
including but not limited to accuracy, completeness, merchantability, fitness for a particular purpose or infringement of any third  
party’s intellectual property rights.  
You are solely responsible for your use of Novosense’ products and applications, and for the safety thereof. You shall comply with  
all laws, regulations and requirements related to Novosense’s products and applications, although information or support related  
to any application may still be provided by Novosense.  
The resources are intended only for skilled developers designing with Novosense’ products. Novosense reserves the rights to  
make corrections, modifications, enhancements, improvements or other changes to the products and services provided.  
Novosense authorizes you to use these resources exclusively for the development of relevant applications designed to integrate  
Novosense’s products. Using these resources for any other purpose, or any unauthorized reproduction or display of these  
resources is strictly prohibited. Novosense shall not be liable for any claims, damages, costs, losses or liabilities arising out of the  
use of these resources.  
For further information on applications, products and technologies, please contact Novosense (www.novosns.com).  
Suzhou Novosense Microelectronics Co., Ltd  
Copyright © 2023, NOVOSENSE  
Page 20  
 

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