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NRVUA160VT3G PDF预览

NRVUA160VT3G

更新时间： 2023-06-19 14:31:27
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
4页 49K
描述
Power Rectifier, Ultra-Fast Recovery, 1 A, 600 V

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中文翻译

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NRVUA160VT3G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：PLASTIC SMA PACKAGE, 2 PIN针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.80Factory Lead Time：1 week
风险等级：0.97其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.05 VJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：30 A元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：2 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.075 µs
子类别：Rectifier Diodes表面贴装：YES
端子面层：Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

NRVUA160VT3G 数据手册

 浏览型号NRVUA160VT3G的Datasheet PDF文件第2页浏览型号NRVUA160VT3G的Datasheet PDF文件第3页浏览型号NRVUA160VT3G的Datasheet PDF文件第4页 
MURA160T3  
Preferred Device  
Surface Mount  
Ultrafast Power Rectifier  
Ideally suited for high voltage, high frequency rectification, or as  
free wheeling and protection diodes in surface mount applications  
where compact size and weight are critical to the system.  
http://onsemi.com  
Features  
• Small Compact Surface Mountable Package with J−Bend Leads  
• Rectangular Package for Automated Handling  
ULTRAFAST RECTIFIER  
1 AMPERE, 600 VOLTS  
• High Temperature Glass Passivated Junction  
• Low Forward Voltage Drop (1.05 V Max @ 1.0 A, T = 150°C)  
J
• Pb−Free Package is Available  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
• Weight: 70 mg (Approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
SMA  
CASE 403D  
PLASTIC  
Leads are Readily Solderable  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Polarity: Polarity Band Indicates Cathode Lead  
MARKING DIAGRAM  
• ESD Protection: Human Body Model > 4000 V (Class 3)  
Machine Model > 400 V (Class C)  
U4J  
AYWW G  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
600  
V
RRM  
RWM  
R
V
V
U4J = Device Code  
Average Rectified Forward Current  
I
A
A
F(AV)  
A
Y
= Assembly Location  
= Year  
@ T = 145°C  
1.0  
2.0  
L
@ T = 110°C  
L
WW = Work Week  
G
= Pb−Free Package  
Non-Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single Phase,  
60 Hz)  
I
30  
FSM  
ORDERING INFORMATION  
Operating Junction Temperature Range  
T
−65 to +175  
°C  
†
J
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
MURA160T3  
SMA  
5000/Tape & Reel  
5000/Tape & Reel  
Symbol  
Max  
Unit  
MURA160T3G  
SMA  
(Pb−Free)  
Thermal Resistance, Junction−to−Lead  
Psi  
24  
°C/W  
JL  
(T = 25°C) (Note 1)  
(Note 2)  
R
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
216  
q
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. Rating applies when surface mounted on the minimum pad size  
recommended, PC Board FR−4.  
2. In compliance with JEDEC 51, these values (historically represented by R  
)
q
JL  
are now referenced as Psi  
.
JL  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 4  
MURA160T3/D  
 
1234

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