Preliminary Data Sheet
NP89N055MUK, NP89N055NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0600EJ0100
Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
DS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A)
R
Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP89N055MUK-S18-AY *
NP89N055NUK-S18-AY *
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Package
TO-220 (MP-25K)
TO-262 (MP-25SK)
1
1
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
Ratings
55
Unit
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
V
V
20
90
A
1
Drain Current (pulse) *
360
147
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Repetitive Avalanche Current *
Repetitive Avalanche Energy *
Tstg
–55 to 175
33
2
IAR
2
EAR
108
mJ
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1%
*2 RG = 25 , VGS = 20 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.02
83.3
°C/W
°C/W
R07DS0600EJ0100 Rev.1.00
Jan 11, 2012
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