Datasheet > 触发装置 > 硅浪涌保护器> NP1800SBMCT3G

NP1800SBMCT3G

更新时间： 2024-01-11 21:17:24

品牌	Logo	应用领域
安森美 - ONSEMI		触发装置硅浪涌保护器光电二极管
页数	文件大小	规格书
7页	131K
描述
80A, Ultra Low Capacitance TSPD

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NP1800SBMCT3G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DO-214	包装说明：	ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.30.00.80
风险等级：	5.81	Is Samacsys：	N
其他特性：	UL RECOGNIZED	最大转折电压：	220 V
配置：	SINGLE	最大断态直流电压：	170 V
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
通态非重复峰值电流：	30 A	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-55 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SILICON SURGE PROTECTOR
Base Number Matches：	1

NP1800SBMCT3G 数据手册

NP−SBMC Series

100

t = rise time to peak value

t = decay time to half value

Peak

Value

100

Half Value

0.1

100

1000

CURRENT DURATION (s)

TIME (ms)

Figure 2. Nonrepetitive On−State Current vs. Time

Figure 3. Nonrepetitive On−State Impulse vs.

Waveform (I_PPS

(I_TSM

)

Detailed Operating Description

The TSPD or Thyristor Surge Protection Device are

specialized silicon based overvoltage protectors, used to

protect sensitive electronic circuits from damaging

overvoltage transient surges caused by induced lightning

and powercross conditions.

The electrical characteristics of the TSPD help the user to

define the protection threshold for the circuit. During the

open circuit condition the device must remain transparent;

this is defined by the I

. The I

should be as low as

DRM

possible. The typical value is less than 5 mA.

The TSPD protects by switching to a low on state voltage

when the specified protection voltage is exceeded. This is

known as a “crowbar” effect. When an overvoltage occurs,

the crowbar device changes from a high−impedance to a

low−impedance state. This low−impedance state then offers

a path to ground, shunting unwanted surges away from the

sensitive circuits.

The circuit operating voltage and protection voltage must

be understood and considered during circuit design. The

(BO)

is the guaranteed maximum voltage that the protected

circuit will see, this is also known as the protection voltage.

The V is the guaranteed maximum voltage that will

DRM

keep the TSPD in its normal open circuit state. The TSPD

is typically a 20−30% higher than the V . Based

(BO)

DRM

This crowbar action defines the TSPD’s two states of

functionality: Open Circuit and Short Circuit.

Open Circuit – The TSPD must remain transparent during

normal circuit operation. The device looks like an open

across the two wire line.

on these characteristics it is critical to choose devices which

have a V higher than the normal circuit operating

DRM

voltage, and a V

which is less than the failure threshold

(BO)

of the protected equipment circuit. A low on−state voltage

V allows the TSPD to conduct large amounts of surge

Short Circuit – When a transient surge fault exceeds the

TSPD protection voltage threshold, the devices switches on,

and shorts the transient to ground, safely protecting the

circuit.

current (500 A) in a small package size.

Once a transient surge has passed and the operating

voltage and currents have dropped to their normal level the

TSPD changes back to its open circuit state.

(OP)

•TSPD looks like an open

•Circuit operates normally

Protected

−

TSPD

(OP)

Equipment

−

Normal Circuit Operation

•Fault voltage greater than V occurs

(Fault)

•TSPD shorts fault to ground

•After short duration events the O/V

switches back to an open condition

•Worst case (Fail/Safe)

•O/V permanent short

•Equipment protected

Protected

(Fault)

TSPD

(Fault)

Equipment

−

Operation during a Fault

Figure 4. Normal and Fault Conditions

http://onsemi.com

1 2 3 456 7

下载PDF

与NP1800SBMCT3G相关器件

型号	品牌	描述	获取价格	数据表
NP1800SBT3G	ONSEMI	Thyristor Surge Protectors High Voltage Bidirectional	获取价格
NP1800SCMCT3G	ONSEMI	100A, Ultra Low Capacitance TSPD	获取价格
NP1800SCT3G	ONSEMI	Thyristor Surge Protectors High Voltage Bidirectional	获取价格
NP1800SDMCT3G	ONSEMI	High Current TSPD	获取价格
NP1800SET3G	ONSEMI	SILICON SURGE PROTECTOR	获取价格
NP1808	YAGEO	SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS	获取价格

与NP1800SBMCT3G相关文章

深入解析AD7606高性能多通道模数转换器：资料手册参数分析
2024-05-10

4
74HC573三态非易失锁存器(Latch)资料手册参数分析
2024-05-10

3
MAX3232 RS-232电平转换器资料手册参数分析
2024-05-10

4
MAX485 RS-485/RS-422收发器资料手册参数分析
2024-05-10

4

产品中心

服务支持

精选活动

关于我们

帮助中心

NP1800SBMCT3G

NP1800SBMCT3G 技术参数

NP1800SBMCT3G 数据手册

与NP1800SBMCT3G相关器件

与NP1800SBMCT3G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NP1800SBMCT3G

NP1800SBMCT3G 技术参数

NP1800SBMCT3G 数据手册

与NP1800SBMCT3G相关器件

与NP1800SBMCT3G相关文章

您还可以找

您在本页遇到什么问题？