是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | DFN | 包装说明: | 1 X 1 MM, 0.35 MM PITCH, LEAD FREE, UDFN-6 |
针数: | 6 | Reach Compliance Code: | compliant |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 4 weeks |
风险等级: | 4.7 | 系列: | 2G |
JESD-30 代码: | S-PDSO-N6 | 长度: | 1 mm |
负载电容(CL): | 50 pF | 逻辑集成电路类型: | INVERTER |
最大I(ol): | 0.008 A | 湿度敏感等级: | 1 |
功能数量: | 2 | 输入次数: | 1 |
端子数量: | 6 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 输出特性: | OPEN-DRAIN |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VSON |
封装等效代码: | SOLCC6,.04,14 | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, VERY THIN PROFILE | 包装方法: | TAPE AND REEL |
电源: | 1.8/5 V | Prop。Delay @ Nom-Sup: | 11 ns |
传播延迟(tpd): | 11 ns | 认证状态: | Not Qualified |
施密特触发器: | NO | 座面最大高度: | 0.55 mm |
子类别: | Gates | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 2.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | Nickel/Gold/Palladium (Ni/Au/Pd) |
端子形式: | NO LEAD | 端子节距: | 0.35 mm |
端子位置: | DUAL | 宽度: | 1 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NLX2G06CMX1TCG | ONSEMI |
获取价格 |
Dual Inverter, Open Drain | |
NLX2G06MUTCG | ONSEMI |
获取价格 |
2G SERIES, DUAL 1-INPUT INVERT GATE, PDSO6, 1.20 X 1 MM, 0.40 MM PITCH, LEAD FREE, UDFN-6 | |
NLX2G07 | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer, Open Drain | |
NLX2G07_16 | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer Open Drain | |
NLX2G07AMUTCG | ONSEMI |
获取价格 |
Dual Buffer with Open Drain Output, UDFN6 1.45x1, 0.5P, 3000-REEL | |
NLX2G07AMX1TCG | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer, Open Drain | |
NLX2G07BMX1TCG | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer, Open Drain | |
NLX2G07CMUTCG | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer Open Drain | |
NLX2G07CMX1TCG | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer, Open Drain | |
NLX2G07MUTCG | ONSEMI |
获取价格 |
Dual Non-Inverting Buffer Open Drain |