Datasheet > NESG220033-A

NESG220033-A

更新时间： 2024-02-23 00:55:21

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	89K
描述
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

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NESG220033-A 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, MINIMOLD PACKAGE-3
Reach Compliance Code：	unknown	风险等级：	5.72
最大集电极电流 (IC)：	0.2 A	基于收集器的最大容量：	0.9 pF
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	12500 MHz
Base Number Matches：	1

NESG220033-A 数据手册

DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG220033

NPN SiGe RF TRANSISTOR FOR

UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION

3-PIN MINIMOLD (33 PKG)

FEATURES

•

The device is an ideal choice for low noise, low distortion amplification.

NF = 0.75 dB TYP. @ V^CE= 5 V, IC = 10 mA, f = 1 GHz

P^{O (1 dB)}= 21.5 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

OIP³= 35 dBm TYP. @ VCE = 5 V, IC (set) = 40 mA, f = 1 GHz

Maximum stable power gain: MSG =14.0 dB TYP. @ V^CE= 5 V, IC = 40 mA, f = 1 GHz

SiGe HBT technology (UHS2) : f^T= 12.5 GHz

•

This product is improvement of ESD of NESG2xxx series.

3-pin minimold (33 PKG)

ORDERING INFORMATION

Part Number

NESG220033

Order Number

Package

Quantity

Supplying Form

NESG220033-A

3-pin minimold

50 pcs

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side

of the tape

(33 PKG) (Pb-Free)

(Non reel)

NESG220033-T1B NESG220033-T1B-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Base Current^{Note 1}

Symbol

VCBO

VCES

VCEO

Ratings

Unit

5.5

°C

Collector Current

200

Note 2

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

480

150

Tstg

−65 to +150

Notes 1. Depend on the ESD protect device.

2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. PU10766EJ03V0DS (3rd edition)

Date Published November 2009 NS

Printed in Japan

2009

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7 8

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与NESG220033-A相关器件

型号	品牌	描述	获取价格	数据表
NESG220033-A-FB	RENESAS	RF SMALL SIGNAL TRANSISTOR	获取价格
NESG220033-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG220033-T1B	RENESAS	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格
NESG220033-T1B	NEC	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格
NESG220033-T1B-A	NEC	NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL	获取价格
NESG220033-T1B-A	RENESAS	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, MINIMOLD PACKAGE-3	获取价格

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