生命周期: | Transferred | 包装说明: | LEAD FREE, MINIMOLD PACKAGE-3 |
Reach Compliance Code: | unknown | 风险等级: | 5.72 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 0.7 pF |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 15500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NESG210833-T1B | NEC | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL |
获取价格 |
|
NESG210833-T1B | RENESAS | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL |
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NESG210833-T1B-A | RENESAS | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, MINIMOLD PACKAGE-3 |
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|
NESG210833-T1B-A | NEC | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL |
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|
NESG210833-T1B-A-FB | RENESAS | TRANSISTOR RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
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|
NESG220033 | NEC | NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOL |
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