Datasheet > 射频和微波 > 射频/微波开关> UPG2010TB

UPG2010TB

更新时间： 2024-01-19 04:56:29

品牌	Logo	应用领域
日电电子 - NEC		射频和微波开关射频开关微波开关光电二极管
页数	文件大小	规格书
11页	84K
描述
L-BAND SPDT SWITCH

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPG2010TB 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.83	构造：	COMPONENT
最大输入功率 (CW)：	36.02 dBm	最大插入损耗：	0.5 dB
JESD-609代码：	e6	最大工作频率：	2500 MHz
最小工作频率：	500 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	SPDT
端子面层：	Tin/Bismuth (Sn/Bi)

UPG2010TB 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2010TB

L-BAND SPDT SWITCH

DESCRIPTION

The µPG2010TB is GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for

mobile phone and another L-band application.

This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.

This device is housed in a 6-pin super minimold package. And this package is able to high-density surface

mounting.

FEATURES

•

Supply voltage

: VDD = 2.7 to 3.0 V (2.8 V TYP.)

Switch control voltage

: V^{cont (H)}= 2.7 to 3.0 V (2.8 V TYP.)

: V^{cont (L)}= −0.2 to +0.2 V (0 V TYP.)

•

Low insertion loss

: L^INS1= 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: L^INS2= 0.30 dB TYP. @ f = 2.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

: L^INS3= 0.35 dB TYP. @ f = 2.5 GHz, VDD = 2.8 V,

V^cont= 2.8 V/0 V (Reference value)

•

High isolation

High power

: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, V^DD= 2.8 V, Vcont = 2.8 V/0 V

: ISL2 = 25 dB TYP. @ f = 2.5 GHz, V^DD= 2.8 V, Vcont = 2.8 V/0 V (Reference value)

: P^{in (0.1 dB)}= +33.0 dBm TYP. @ f = 1.0 GHz, VDD = 2.8 V, Vcont = 2.8 V/0 V

•

High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATIONS

•

L-band digital cellular or cordless telephone

PCS, W-LAN, WLL and Bluetooth^TMetc.

ORDERING INFORMATION

Part Number

Package

Marking

G2Y

Supplying Form

• Embossed tape 8 mm wide

µPG2010TB-E3

6-pin super minimold

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2010TB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10317EJ02V0DS (2nd edition)

Date Published October 2003 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices 2003

12 3 4 5 6 7...11

下载PDF

与UPG2010TB相关器件

型号	品牌	描述	获取价格	数据表
UPG2010TB-A	NEC	暂无描述	获取价格
UPG2010TB-E3	NEC	L-BAND SPDT SWITCH	获取价格
UPG2010TB-E3-A	CEL	HIGH POWER SINGLE CONTROL L-BAND SPDT SWITCH	获取价格
UPG2012TB	NEC	NECs 1/4W SINGLE CONTROL L-BAND SPDT SWITCH	获取价格
UPG2012TB	CEL	L-BAND SPDT SWITCH	获取价格
UPG2012TB_1	NEC	L-BAND SPDT SWITCH	获取价格