生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 40 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDU406AEL | TI |
获取价格 |
15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
NDU406AL | TI |
获取价格 |
15A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
NDU406B | TI |
获取价格 |
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
NDU406BE | TI |
获取价格 |
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
NDU406BEL | TI |
获取价格 |
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
NDU406BL | TI |
获取价格 |
12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
NDU406BL | NSC |
获取价格 |
TRANSISTOR 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose | |
NDU4116E | NICHIA |
获取价格 |
Ultra Violet Laser Diode | |
NDU4316E | NICHIA |
获取价格 |
Ultra Violet Laser Diode | |
NDU502C1R10 | AMPHENOL |
获取价格 |
Low cost, solid state temperature sensor |