Datasheet > NAND512W4M4AZB5E

NAND512W4M4AZB5E

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		动态存储器
页数	文件大小	规格书
22页	200K
描述
IC,MIXED MEMORY,FLASH+SDRAM,BGA,149PIN,PLASTIC

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中文翻译

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数据手册

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NAND512W4M4AZB5E 数据手册

NAND256-M

NAND512-M, NAND01G-M

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND

Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

PRELIMINARY DATA

Feature summary

■ Multi-Chip Packages

FBGA

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND

Flash + 1 die of 256 Mb (x16) SDR

LPSDRAM

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND

Flash + 2 dice of 256 Mb (x16) SDR

LPSDRAMs

TFBGA107 10.5 x 13 x 1.2mm

TFBGA149 10 x 13.5 x 1.2mm

LFBGA137 10.5 x 13 x 1.4mm

– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND

Flash +1 die of 256 Mb (x16) DDR

LPSDRAM

– 1 die of 512 Mb (x16) NAND Flash + 1 die

of 256 Mb or 512 Mb (x16) DDR LPSDRAM

■ Fast Block Erase

■ Supply voltages

– Block erase time: 2ms (typ)

– V_DDF= 1.7V to 1.95V or 2.5V to 3.6V

– V_DDD= V_DDQD= 1.7V to 1.9V

■ Status Register

■ Data integrity

■ Electronic Signature

■ ECOPACK^®packages

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ Temperature range

LPSDRAM

– -30 to 85°C

■ Interface: x16 bus width

■ Deep Power Down mode

■ 1.8v LVCMOS interface

Flash Memory

■ NAND Interface

– x8 or x16 bus width

– Multiplexed Address/ Data

■ Quad internal Banks controlled by BA0 and

BA1

■ Page size

■ Automatic and controlled Precharge

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ Auto Refresh and Self Refresh

– 8,192 Refresh cycles/64ms

■ Block size

– Programmable Partial Array Self Refresh

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

– Auto Temperature Compensated Self

Refresh

■ Page Read/Program

■ Wrap sequence: sequential/interleave

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ Burst Termination by Burst Stop command and

Precharge command

■ Copy Back Program mode

– Fast page copy without external buffering

May 2006

Rev 4

1/22

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...22

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与NAND512W4M4AZB5E相关器件

型号	品牌	获取价格	描述	数据表
NAND512W4M5AZB5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5AZB5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5AZC5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5AZC5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5BZB5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5BZB5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5BZC5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5BZC5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5CZB5E	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.
NAND512W4M5CZB5F	STMICROELECTRONICS	获取价格	256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.

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