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NAND01GW3B2BZA1F

更新时间： 2024-01-24 02:51:34
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 闪存
页数 文件大小 规格书
62页 713K
描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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NAND01GW3B2BZA1F 技术参数

是否Rohs认证：不符合生命周期：Transferred
零件包装代码：BGA包装说明：9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
针数：63Reach Compliance Code：compliant
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.1Is Samacsys：N
最长访问时间：35 nsJESD-30 代码：R-PBGA-B63
JESD-609代码：e0长度：12 mm
内存密度：1073741824 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
端子数量：63字数：134217728 words
字数代码：128000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：128MX8封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装形状：RECTANGULAR
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：3 V
认证状态：Not Qualified座面最大高度：1.05 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：TIN LEAD端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NAND TYPE
宽度：9.5 mmBase Number Matches：1

NAND01GW3B2BZA1F 数据手册

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NAND01G-B2B, NAND02G-B2C  
Description  
1
Description  
ST NAND01G-B2B and NAND02G-B2C Flash 2112 Byte/ 1056 Word Page is a family of  
non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit  
to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either  
2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the  
device has a x8 or x16 bus width.  
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or  
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate  
to other densities without changing the footprint.  
Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of  
NAND Flash devices it is strongly recommended to implement an Error Correction Code  
(ECC).  
The devices feature a Write Protect pin that allows performing hardware protection against  
program and erase operations.  
The devices feature an open-drain Ready/Busy output that can be used to identify if the  
Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output  
allows the Ready/Busy pins from several memories to be connected to a single pull-up  
resistor.  
A Copy Back Program command is available to optimize the management of defective  
blocks. When a Page Program operation fails, the data can be programmed in another page  
without having to resend the data to be programmed.  
Each device has Cache Program and Cache Read features which improve the program and  
read throughputs for large files. During Cache Programming, the device loads the data in a  
Cache Register while the previous data is transferred to the Page Buffer and programmed  
into the memory array. During Cache Reading, the device loads the data in a Cache  
Register while the previous data is transferred to the I/O Buffers to be read.  
All devices have the Chip Enable Don’t Care feature, which allows code to be directly  
downloaded by a microcontroller, as Chip Enable transitions during the latency time do not  
stop the read operation.  
All devices have the option of a Unique Identifier (serial number), which allows each device  
to be uniquely identified.  
The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not  
described in the datasheet. For more details of this option contact your nearest ST Sales  
office.  
The devices are available in the following packages:  
■
■
■
TSOP48 (12 x 20mm)  
VFBGA63 (9.5 x 12 x 1mm, 0.8mm pitch) for NAND02G-B2C devices.  
VFBGA63 (9 x 11 x 1mm, 0.8mm pitch) for NAND01G-B2B devices.  
In order to meet environmental requirements, ST offers the NAND01G-B2B and NAND02G-  
®
B2C in ECOPACK packages. ECOPACK packages are Lead-free. The category of second  
Level Interconnect is marked on the package and on the inner box label, in compliance with  
JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also  
marked on the inner box label. ECOPACK is an ST trademark.  
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与NAND01GW3B2BZA1F相关器件

型号 品牌 获取价格 描述 数据表
NAND01GW3B2BZA1T NUMONYX

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 		Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND01GW3B2BZA1T STMICROELECTRONICS

获取价格

 		128MX8 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND01GW3B2BZA6 STMICROELECTRONICS

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 		1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2BZA6E NUMONYX

获取价格

 		1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2BZA6E STMICROELECTRONICS

获取价格

 		1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2BZA6F STMICROELECTRONICS

获取价格

 		1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2BZA6F NUMONYX

获取价格

 		1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GW3B2BZA6T STMICROELECTRONICS

获取价格

 		Flash, 128MX8, 35ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
NAND01GW3B2BZB1 STMICROELECTRONICS

获取价格

 		1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GW3B2BZB6 STMICROELECTRONICS

获取价格

 		1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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