生命周期: | Obsolete | 包装说明: | DISK BUTTON, O-CEDB-N2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 400 V/us | 最大直流栅极触发电流: | 350 mA |
最大直流栅极触发电压: | 4 V | 最大维持电流: | 1000 mA |
JESD-30 代码: | O-CEDB-N2 | 最大漏电流: | 200 mA |
通态非重复峰值电流: | 28000 A | 元件数量: | 1 |
端子数量: | 2 | 最大通态电流: | 3700000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 3414.75 A | 重复峰值关态漏电流最大值: | 200000 µA |
断态重复峰值电压: | 3200 V | 重复峰值反向电压: | 3200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
N750CH32JOO | IXYS | Silicon Controlled Rectifier, 3414.75A I(T)RMS, 3700000mA I(T), 3200V V(DRM), 3200V V(RRM) |
获取价格 |
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N750CH36GOO | IXYS | Silicon Controlled Rectifier, 3414.75A I(T)RMS, 3700000mA I(T), 3600V V(DRM), 3600V V(RRM) |
获取价格 |
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N750CH36JOO | IXYS | Silicon Controlled Rectifier, 3414.75A I(T)RMS, 3700000mA I(T), 3600V V(DRM), 3600V V(RRM) |
获取价格 |
|
N750CH36KOO | IXYS | Silicon Controlled Rectifier, 3414.75A I(T)RMS, 3700000mA I(T), 3600V V(DRM), 3600V V(RRM) |
获取价格 |
|
N750CH42 | IXYS | Silicon Controlled Rectifier, 3414.75A I(T)RMS, 900000mA I(T), 4200V V(DRM), 4200V V(RRM), |
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N750CH44GOO | IXYS | Silicon Controlled Rectifier, 3414.75A I(T)RMS, 3700000mA I(T), 4400V V(DRM), 4400V V(RRM) |
获取价格 |