Datasheet > N04Q1618C2BX-15C

N04Q1618C2BX-15C

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
AMI		静态存储器
页数	文件大小	规格书
13页	295K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N04Q1618C2BX-15C 数据手册

AMI Semiconductor, Inc.

N04Q1618C2B

ULP Memory Solutions

670 North McCarthy Blvd. Suite 220

Milpitas, CA 95035

Advance Information

PH: 408-935-7777, FAX: 408-935-7770

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual

Vcc and VccQ for Ultimate Power Reduction

256K×16 bit POWER SAVER TECHNOLOGY

Overview

Features

The N04Q16yyC2B are ultra-low power memory

devices containing a 4 Mbit Static Random Access

Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using AMI

Semiconductor’s advanced CMOS technology to

provide ultra-low active and standby power. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Multiple Power Supply Ranges

1.1V - 1.3V

1.65V - 1.95V

• Dual Vcc / VccQ Power Supplies

1.2V Vcc with 3V VccQ

1.8V Vcc with 3V VccQ

• Very low standby current

50nA typical for 1.2V operation

• Very low operating current

accessed independently. The 4Mb SRAM is

optimized for the ultimate in low power and is

suited for various applications where ultra-low-

power is critical such as medical applications,

battery backup and power sensitive hand-held

devices. The unique page mode operation saves

active operating power and the dual power supply

rails allow very low voltage operation while

400µA typical for 1.2V operation at 1µs

• Very low Page Mode operating current

80µA typical for 1.2V operation at 1µs

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

maintaining 3V I/O capability. The device can

• Automatic power down to standby mode

• BGA, TSOP and KGD options

• RoHS Compliant

operate over a very wide temperature range of 0 C

to +70 C for the lowest power and is also available

in the industrial range of -40 C to +85 C. The

devices are available in standard BGA and TSOP

packages. The devices are also available as

Known Good Die (KGD) for embedded package

applications.

Product Options

Typical

Vcc

(V)

VccQ

Speed

(nS)

Typical

Operating

Part Number

Standby

Current

(V)

Operating Current Temperature

N04Q1612C2Bx-15C¹

N04Q1618C2Bx-15C¹

N04Q1618C2Bx-70C

N04Q1618C2Bx-85C

50nA

1.2

1.2, 1.8, 3.0

150ns

70ns

0.4 mA @ 1MHz

0^oC to +70^oC

0.6 mA @ 1MHz

200nA

1.8

1.8, 3.0

85ns

0.6 mA @ 1MHz

1. Part numbers are under development. Please contact your local sales representative for details.

Stock No. 23451-D 11/06

The specification is ADVANCE INFORMATION and subject to change without notice.

12 3 4 5 6 7...13

下载PDF

与N04Q1618C2BX-15C相关器件

型号	品牌	描述	获取价格	数据表
N04Q1618C2BX-70C	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/	获取价格
N04Q1618C2BX-70C	AMI	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/	获取价格
N04Q1618C2BX-85C	AMI	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/	获取价格
N04Q1625C2BB-15C	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/	获取价格
N04Q1625C2BB-15I	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/	获取价格
N04Q1625C2BB2-15C	NANOAMP	4Mb Ultra-Low Power Asynchronous CMOS SRAM w/	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

N04Q1618C2BX-15C

N04Q1618C2BX-15C 数据手册

与N04Q1618C2BX-15C相关器件

与N04Q1618C2BX-15C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N04Q1618C2BX-15C

N04Q1618C2BX-15C 数据手册

与N04Q1618C2BX-15C相关器件

与N04Q1618C2BX-15C相关文章

您还可以找

您在本页遇到什么问题？