Datasheet > N0400P-ZK-E2-AYNote

N0400P-ZK-E2-AYNote

更新时间： 2022-02-26 12:28:50

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	232K
描述
MOS FIELD EFFECT TRANSISTOR

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N0400P

Chapter Title

Electrical Characteristics (TA = 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain Current

Gate Leakage Current

SYMBOL

TEST CONDITIONS

VDS = −40 V, VGS = 0 V

MIN.

TYP.

MAX.

UNIT

μA

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

−10

m10

−1.5

VGS = m12 V, VDS = 0 V

VDS = −10 V, ID = −1 mA

VDS = −10 V, ID = −7.5 A

VGS = −4.5 V, ID = −7.5 A

VGS = −2.5 V, ID = −3.8 A

VDS = −10 V,

<R>

Gate to Source Cut-off Voltage

−0.5

−1.0

Note

Forward Transfer Admittance

6.0

Note

Drain to Source On-state Resistance

mΩ

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

1400

200

155

Coss

Crss

td(on)

VGS = 0 V,

f = 1 MHz

VDD = −20 V, ID = −7.5 A,

VGS = −4.5 V,

Turn-off Delay Time

Fall Time

td(off)

RG = 0 Ω

104

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

VDD = −32 V,

QGS

QGD

VF(S-D)

trr

VGS = −4.5 V,

ID = −15 A

Note

Body Diode Forward Voltage

IF = −15 A, VGS = 0 V

IF = −15 A, VGS = 0 V,

di/dt = −100 A/μs

0.94

1.5

Reverse Recovery Time

Reverse Recovery Charge

<R>

Qrr

Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2%

TEST CIRCUIT 2 SWITCHING TIME

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

= 25 Ω

GS(−)

90%

VGS

10%

VDD

50 Ω

PG.

GS = −12 → 0 V

Wave Form

PG.

VDD

VDS(−)

90%

−

BV^DSS

IAS

GS(−)

10% 10%

VDS

Wave Form

d(on)

td(off)

VDD

ton

toff

τ = 1

Starting Tch

Duty Cycle ≤ 1%

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= −2 mA

PG.

VDD

50 Ω

R07DS0500EJ0200 Rev.2.00

Aug 19, 2011

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