Datasheet > N02M0818L2A

N02M0818L2A

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		医疗静态存储器
页数	文件大小	规格书
8页	216K
描述
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

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N02M0818L2A 数据手册

NanoAmp Solutions, Inc.

N02M0818L2A

Recommended Timing Limits - Read Cycle (Not all inclusive values tested)

1.3 - 2.3 V

1.65 - 2.3 V

Item

Symbol

Units

Min.

Max.

Min.

Max.

t_RC

t_AA

Read Cycle Time

500

100

Address Access Time

500

200

100

t_CO

t_OE

t_LZ

Chip Enable to Valid Output

Output Enable to Valid Output

Chip Enable to Low-Z output

Output Enable to Low-Z Output

Chip Disable to High-Z Output

Output Disable to High-Z Output

Output Hold from Address Change

100

t_OLZ

t_HZ

t_OHZ

t_OH

150

Recommended Timing Limits - Write Cycle (Not all inclusive values tested)

1.3 - 2.3 V

1.65 - 2.3 V

Item

Symbol

Units

Min.

Max.

Min.

Max.

t_WC

t_CW

t_AW

t_WP

t_AS

Write Cycle Time

Chip Enable to End of Write

Address Valid to End of Write

Address Setup Time

500

400

300

Write Pulse Width

t_WR

t_WHZ

t_DW

t_DH

Write Recovery Time

Write to High-Z Output

Data to Write Time Overlap

Data Hold from Write Time

End Write to Low-Z Output

Output Hold from Address Change

300

t_OW

t_OH

(DOC#14-02-036 Rev C ECN#01-0887)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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