Datasheet > N02M0818L2A

N02M0818L2A

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NANOAMP		医疗静态存储器
页数	文件大小	规格书
8页	216K
描述
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N02M0818L2A 数据手册

NanoAmp Solutions, Inc.

N02M0818L2A

Absolute Maximum Ratings

Item

Symbol

V_IN,OUT

V_CC

Rating

–0.3 to V_CC+0.3

–0.3 to 3.0

500

Unit

Voltage on any pin relative to V_SS

Voltage on V_CCSupply Relative to V_SS

Power Dissipation

P_D

^oC

T_STG

Storage Temperature

–40 to 125

T_A

Operating Temperature

-20 to +60

240^oC, 10sec(Lead only)

T_SOLDER

Soldering Temperature and Time

1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated in the operating section of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Recommended Operating Limits (Not all inclusive values tested)

Item

Symbol

V_CC

V_DR

V_IH

Test Conditions

Min.

1.3

Max

Unit

Core Supply Voltage

Data Retention Voltage

Input High Voltage

Input Low Voltage

2.3

Chip Disabled (Note 3)

1.0

0.7V_CCQV_CCQ+0.5

V_IL

0.3V_CCQ

–0.5

V_OH

V_OL

I_LI

I_OH= 0.2mA

I_OL= -0.2mA

V_CCQ–0.3

Output High Voltage

Output Low Voltage

Input Leakage Current

Output Leakage Current

0.3

0.1

V_IN= 0 to V_CC

µA

I_LO

OE = V_IHor Chip Disabled

V_CC=2.3 V, V_IN=V_IHor V_IL

Chip Enabled, I_OUT= 0

Read/Write Operating Supply Current

I_CC1

I_CC2

2.5

@ 1 µs Cycle Time²

V_CC=2.3 V, V_IN=V_IHor V_IL

Chip Enabled, I_OUT= 0

Read/Write Operating Supply Current

@ 85 ns Cycle Time²

13.0

V_IN= V_CCor 0V

Chip Disabled

Standby Current³

I_SB1

450

t_A= 37^oC, V_CC= 2.3 V

V_CC= 1.0V, V_IN= V_CCor 0

Chip Disabled, t_A= 85^oC

Data Retention Current³

I_DR

1.0

µA

1. These limits are the expected operating conditions for this device. Only selected points within this range of conditions

are specifically tested and guaranteed.

2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current

required to drive output capacitance expected in the actual system.

3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is

low and CE2 is high.

(DOC#14-02-036 Rev C ECN#01-0887)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

1 234 5 6 7 8

下载PDF

与N02M0818L2A相关器件

型号	品牌	描述	获取价格	数据表
N02M0818L2AD	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N02M0818L2AD-85I	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N02M0818L2AN	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N02M0818L2AN-85I	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N02M083WL1A	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格
N02M083WL1AD	NANOAMP	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit	获取价格